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DMC564070R

Description
trans prebias dual npn smini6
CategoryDiscrete semiconductor    The transistor   
File Size541KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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DMC564070R Overview

trans prebias dual npn smini6

DMC564070R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPanasonic
package instructionSMALL OUTLINE, R-PDSO-F6
Reach Compliance Codeunknown
ECCN codeEAR99
Factory Lead Time10 weeks
Samacsys DescriptionDMC564070R, Dual Digital Transistor, NPN 100 MA 50 V Ratio Of 22 kΩ, 6-Pin SMini6 F3 B
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)160
JESD-30 codeR-PDSO-F6
Number of components2
Number of terminals6
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.15 W
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
DMC56407
Silicon NPN epitaxial planar type
For digital circuits
Features
High forward current transfer ratio h
FE
with excellent linearity
Low collector-emitter saturation voltage V
CE(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Unit: mm
Marking Symbol: N7
Basic Part Number
Dual DRC2124T (Individual)
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
Panasonic
JEITA
Code
(C1)
6
Packaging
DMC564070R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Tr1
Tr2
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Overall
Junction temperature
Operating ambient temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
opr
T
stg
Rating
50
50
100
150
150
–40 to +85
–55 to +150
Unit
V
V
mA
mW
°C
°C
°C
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
SMini6-F3-B
SC-113DB
SOT-363
(B2)
5
R
1
(E2)
4
Tr1
Tr2
R
1
1
(E1)
2
(B1)
3
(C2)
Resistance value
R
1
22
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Input resistance
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
I(on)
V
I(off)
R
1
Conditions
I
C
= 10 µA, I
E
= 0
I
C
= 2 mA, I
B
= 0
V
CB
= 50 V, I
E
= 0
V
CE
= 50 V, I
B
= 0
V
EB
= 6 V, I
C
= 0
V
CE
= 10 V, I
C
= 5 mA
I
C
= 10 mA, I
B
= 0.5 mA
V
CE
= 0.2 V, I
C
= 5 mA
V
CE
= 5 V, I
C
= 100 µA
–30%
22
1.8
0.4
+30%
160
Min
50
50
0.1
0.5
0.01
460
0.25
Typ
Max
Unit
V
V
µA
µA
mA
V
V
V
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: October 2013
Ver. DED
1
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