Silicon MOS FETs (Small Signal)
2SK601
Silicon N-Channel MOS FET
For switching
unit: mm
s
Features
q
Low ON-resistance R
DS(on)
q
High-speed switching
q
Allowing to be driven directly by CMOS and TTL
q
Mini-power type package, allowing downsizing of the sets and
automatic insertion through the tape/magazine packing.
2.6±0.1
4.5±0.1
1.6±0.2
1.5±0.1
0.4max.
45˚
1.0
–0.2
+0.1
0.4±0.08
4.0
–0.20
s
Absolute Maximum Ratings
(Ta = 25°C)
Parameter
Drain to Source voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
*
0.5±0.08
1.5±0.1
3.0±0.15
0.4±0.04
Symbol
V
DS
V
GSO
I
D
I
DP
P
D*
T
ch
T
stg
Ratings
80
20
±0.5
±1
1
150
−55
to +150
Unit
3
2
1
V
V
A
A
W
°C
°C
1: Gate
2: Drain
3: Source
EIAJ: SC-62
Mini-Power Type Package (3-pin)
marking
Marking Symbol: O
PC board: Copper foil of the drain portion should have a area of 1cm
2
or
more and the board thickness should be 1.7mm.
s
Electrical Characteristics
(Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Y
fs
|
C
oss
t
on*2
t
off*2
*1
Conditions
V
DS
= 60V, V
GS
= 0
V
GS
= 20V, V
DS
= 0
I
DS
= 100µA, V
GS
= 0
I
D
= 1mA, V
DS
= V
GS
I
D
= 0.5A, V
GS
= 10V
I
D
= 0.2A, V
DS
= 15V, f = 1kHz
V
DS
= 10V, V
GS
= 0, f = 1MHz
min
typ
max
10
0.1
Unit
µA
µA
V
80
1.5
2
300
45
30
8
15
20
3.5
4
V
Ω
mS
pF
pF
pF
ns
ns
Input capacitance (Common Source) C
iss
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source) C
rss
Turn-on time
Turn-off time
*1
*2
Pulse measurement
t
on
, t
off
measurement circuit
V
out
V
in
= 10V
68Ω
V
DD
= 30V
V
out
V
in
10%
V
in
10%
90%
90% V
t = 1µ
S
f = 1MH
Z
out
50Ω
t
on
t
off
2.5±0.1
+0.25
1
Silicon MOS FETs (Small Signal)
P
D
Ta
1.6
1.2
Copper foil of the drain portion
should have a area of 1cm
2
or more and the board
thickness should be 1.7mm.
Ta=25˚C
1.0
V
GS
=5.5V
1.0
2SK601
I
D
V
DS
1.2
V
DS
=10V
Ta=25˚C
I
D
V
GS
Allowable power dissipation P
D
(W)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
Drain current I
D
(A)
0.8
5V
Drain current I
D
(A)
0.8
0.6
4.5V
0.6
0.4
4V
0.4
3.5V
0.2
3V
0
60
80 100 120 140 160
0
2
4
6
8
10
0
0
2
4
6
8
10
0.2
Ambient temperature Ta (˚C)
Drain to source voltage V
DS
(V)
Gate to source voltage V
GS
(V)
| Y
fs
|
V
GS
Input capacitance (Common source), Output capacitance (Common source),
Reverse transfer capacitance (Common source) C
iss
,C
oss
,C
rss
(pF)
600
C
iss
, C
oss
, C
rss
V
DS
V
DS
=15V
f=1kHz
Ta=25˚C
V
GS
=0
f=1MHz
Ta=25˚C
R
DS(on)
V
GS
Drain to source ON-resistance R
DS(on)
(
Ω
)
6
I
D
=500mA
5
120
Forward transfer admittance |Y
fs
| (mS)
500
100
400
80
4
300
60
3
Ta=75˚C
2
25˚C
–25˚C
200
40
C
iss
100
20
C
oss
0
1
3
10
30
C
rss
100
300
1000
1
0
0
1
2
3
4
5
6
0
0
4
8
12
16
20
Gate to source voltage V
GS
(V)
Drain to source voltage V
DS
(V)
Gate to source voltage V
GS
(V)
R
DS(on)
Ta
Drain to source ON-resistance R
DS(on)
(
Ω
)
6
I
D
=500mA
5
4
V
GS
=5V
3
10V
2
1
0
–50
–25
0
25
50
75
Ambient temperature Ta (˚C)
2
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