20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX; (973) 376-8960
NPN medium power transistors
FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V).
APPLICATIONS
• General industrial applications.
DESCRIPTION
NPN medium power transistor in a TO-39 metal package.
PINNING
BSX45; BSX46; BSX47
PIN
1
2
3
emitter
base
DESCRIPTION
collector, connected to case
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL
VCBO
BSX45
BSX46
BSX47
VCEO
collector-emitter voltage
BSX45
BSX46
BSX47
open base
-
-
-
-
T
case
< 25 °C
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
_
-
-
TYP.
-
-
-
-
-
-
-
-
100
160
-
MAX.
80
100
120
40
60
80
1.5
6.25
160
250
-
UNIT
V
V
V
V
V
V
A
W
ICM
Plot
peak collector current
total power dissipation
DC current gain
BSX45-10; BSX46-10; BSX47-10
BSX45-16; BSX46-16; BSX47-16
l
c
= 1 00 mA; V
CE
= 1 V
-
63
100
hFE
fi
transition frequency
l
c
= 50 mA; V
CE
= 10 V; f = 100 MHz 50
MHz
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
NPN medium power transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
BSX45
BSX46
BSX47
VCEO
collector-emitter voltage
BSX45
BSX46
BSX47
VEBO
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
case
< 25 °C
open collector
open base
PARAMETER
collector-base voltage
CONDITIONS
open emitter
BSX45; BSX46; BSX47
MIN.
-
-
-
-
-
-
-
-
-
-
-
-65
-
-65
MAX.
80
100
120
40
60
80
7
1
1.5
200
6.25
+150
200
+150
V
V
V
V
V
V
V
A
UNIT
Ic
ICM
IBM
Plot
Tstg
Tj
Tamb
A
mA
W
°C
°C
°c
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
R-th j-c
PARAMETER
thermal resistance from junction to case
CONDITIONS
VALUE
UNIT
thermal resistance from junction to ambient in free air
200
28
K/W
K/W
NPN medium power transistors
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector cut-off current
BSX45; BSX46
ICBQ
collector cut-off current
BSX47
IEBO
emitter cut-off current
DC current gain
BSX45-10; BSX46-10; BSX47-10
BSX45-16; BSX46-16
CONDITIONS
BSX45; BSX46; BSX47
MIN.
TYP. MAX.
UNIT
nA
MA
nA
MA
nA
IE = 0; V
CB
= 60 V
l
E
= 0;V
CB
= 60V;T
a m b
=150°C
IE = 0; VCB = 80 V
l
E
= 0;V
CB
= 80V;T
a m b
=150°
l
c
= 0; V
EB
= 5 V
_
-
_
-
_
15
25
-
-
40
90
100
160
40
60
20
30
-
30
10
30
10
10
-
hpE
l
c
= 100uA;V
CE
= 1 V
hpE
DC current gain
BSX45-10; BSX46-10; BSX47-10
BSX45-16; BSX46-16; BSX47-16
l
c
= 100mA; V
CE
= 1V
63
100
l
c
= 500 mA; V
CE
= 1 V
25
35
l
c
= 1 A; V
CE
= 1 V
-
160
250
hpE
DC current gain
BSX45-10; BSX46-10; BSX47-10
BSX45-16;BSX46-16
hp
E
DC current gain
BSX45-10; BSX46-10; BSX47-10
BSX45-16;BSX46-16
collector-emitter saturation voltage
BSX45; BSX46
collector-emitter saturation voltage
BSX47
base-emitter voltage
-
l
c
= 1 A; I
B
= 100mA
-
VcEsat
_
lc = 500 mA; I
B
= 25 mA
1
V
mV
V
V
V
VcEsat
900
VBE
l
c
= 100mA; VCE = 1 V
l
c
= 500 mA; V
CE
= 1 V
-
0.75
-
-
-
1
1.5
2
25
C
c
collector capacitance
BSX45
BSX46
BSX47
l
c
= 1 A; VCE = 1 V
l
E
= ie = 0;V
CB
= 1 0 V ; f = 1 MHz
-
PF
PF
pF
PF
MHz
dB
-
-
lc = 50 mA; VCE = 10 V; f = 100 MHz 50
lc = 100 nA; VCE = 5 V; R
s
= 1 kii; -
f = 1 kHz; B = 200 Hz
l
c
= ic = 0;V
EB
= 0 . 5 V ; f = 1 MHz
-
-
20
15
80
-
-
c
e
fr
F
emitter capacitance
transition frequency
noise figure
-
3.5
Switching times (between 10% and 90% levels)
ton
toff
turn-on time
turn-off time
lcon = 100 mA; l
Bo
n = 5 mA;
Isoff
=
-5 mA
-
-
-
-
200
850
ns
ns
NPN medium power transistors
PACKAGE OUTLINE
Metal-can cylindrical single-ended package; 3 leads
BSX45; BSX46; BSX47
SOT5/11
- seating plane
H
b
10 mm
I
scale
DIMENSIONS (mm are the original dimensions)
UNIT
nnm
A
6.60
6.35
a
5.08
b
0.48
0.41
D
9.39
9.08
Di
8.33
8.18
j
k
L
14.2
12.7
w
0.2
a
45°
0.85 0.95
0.75 0.75
OUTLINE
VERSION
SOT5/1 1
REFERENCES
IEC
JEDEC
TO-39
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
e30
RF/Wirelessly
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