SILICON CONTROLLED RECTIFIER,200V V(DRM),11A I(T),TO-203AA
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Objectid | 105348321 |
| package instruction | PRESS FIT, O-MUPF-D2 |
| Reach Compliance Code | unknown |
| YTEOL | 0 |
| Nominal circuit commutation break time | 40 µs |
| Critical rise rate of minimum off-state voltage | 50 V/us |
| Maximum DC gate trigger current | 80 mA |
| Maximum DC gate trigger voltage | 3 V |
| JESD-609 code | e0 |
| Maximum leakage current | 2.5 mA |
| On-state non-repetitive peak current | 350 A |
| Maximum on-state voltage | 1.8 V |
| Maximum on-state current | 11000 A |
| Maximum operating temperature | 100 °C |
| Minimum operating temperature | -40 °C |
| Off-state repetitive peak voltage | 200 V |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Trigger device type | SCR |