MT3S35T
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE
MT3S35T
VCO OSCILLETOR STAGE
UHF LOW NOISE AMPLIFIER APPLICATION
Unit: mm
FEATURES
·
·
Low Noise Figure :NF=1.4dB (@f=2GHz)
High Gain:|S21e| =13.0dB (@f=2GHz)
2
Marking
3
Q2
1
2
TESM
JEDEC
―
―
2-1B1A
Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector-Current
Base-Current
Collector Power dissipation
Junction temperature
Storage temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
8
4.5
1.5
24
12
100
150
−55~150
Unit
V
V
V
mA
mA
mW
°C
°C
JEITA
TOSHIBA
Weight:0.0022g (typ.)
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2002-08-19
MT3S35T
Microwave Characteristics
(Ta = 25°C)
Characteristics
Transition Frequency
Insertion Gain
Symbol
fT
|S21e|
2
(1)
|S21e|
2
(2)
NF(1)
NF(2)
Test Condition
V
CE
=3V, I
C
=10mA, f=2GHz
V
CE
=3V, I
C
=10mA, f=1GHz
V
CE
=3V, I
C
=10mA, f=2GHz
V
CE
=3V, I
C
=2mA, f=1GHz
V
CE
=3V, I
C
=2mA, f=2GHz
Min
16
16
11
-
-
Typ.
20
18
13
1.1
1.4
Max
-
-
-
-
1.9
Unit
GHz
dB
dB
dB
dB
Noise Figure
Electrical Characteristics
(Ta = 25°C)
Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Output Capacitance
Reverse Transistor Capacitance
Symbol
I
CBO
I
EBO
hFE
C
ob
C
re
Test Condition
V
CB
=8V, I
E
=0
V
EB
=1V, I
C
=0
V
CE
=3V, I
C
=10mA
V
CB
=1V, I
E
=0, f=1MHz
V
CB
=1V, I
E
=0, f=1MHz (Note 1)
Min
-
-
70
-
-
Typ.
-
-
-
0.46
0.21
Max
1
1
140
0.75
0.4
Unit
µA
µA
-
pF
pF
Note 1:
Cre is measured by 3 terminal method with capacitance bridge.
Caution:
This device is sensitive to electrostatic discharge.
Please make enough tool and equipment earthed when you handle.
2
2002-08-19
MT3S35T
|S21e| -I C
INSERTION GAIN |S21e| (dB)
VCE=3V
2V
15
1V
2
20
INSERTION GAIN |S21e| (dB)
15
|S21e| -I C
VCE=3V
2V
2
2
2
10
1V
10
5
5
f=1GHz
Ta=25℃
1
10
COLLECTOR CURRENT IC (mA)
100
0
0
1
f=2GHz
Ta=25℃
10
COLLECTOR CURRENT I C (mA)
100
25
TRANSITION FREQUENCY fT(GHz)
fT-I C
REVERSE TRANSFER CAPACITANCE Cre(pF)
OUTPUT CAPACITANCE Cob(pF)
0.6
0.5
0.4
0.3
0.2
0.1
0
0.1
Cre,Cob-V CB
IE=0
f=1MHz
Ta=25℃
Cob
20
15
VCE=3V
2V
1V
10
5
0
1
f=2GHz
Ta=25℃
10
COLLECTOR CURRENT I C (mA)
100
Cre
1
10
COLLECTOR-BASE VOLTAGE VCB (V)
4.0
3.5
NOISE FIGURE NF(dB)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1
NF,Ga-I C
16
14
12
10
8
6
f=2GHz
VCE=3V
Ta=25℃
4
2
ASSOCIATED GAIN Ga(dB)
COLLECTOR POWER DISSIPATION PC(mW)
120
100
80
60
40
20
0
0
PC -Ta
Ga
NF
10
COLLECTOR CURRENT I C(mA)
0
100
25
50
75 100 125 150
AMBIENT TEMPERATURE Ta(℃)
175
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2002-08-19
MT3S35T
RESTRICTIONS ON PRODUCT USE
000707EAA
·
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
·
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
·
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under any
intellectual property or other rights of TOSHIBA CORPORATION or others.
·
The information contained herein is subject to change without notice.
4
2002-08-19
Embedded System
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