3.3A, 400V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET
| Parameter Name | Attribute value |
| Maker | STMicroelectronics |
| package instruction | UNCASED CHIP, S-XUUC-N2 |
| Reach Compliance Code | compliant |
| Other features | FAST SWITCHING |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 400 V |
| Maximum drain current (Abs) (ID) | 3.3 A |
| Maximum drain current (ID) | 3.3 A |
| Maximum drain-source on-resistance | 1.8 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | S-XUUC-N2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | UNSPECIFIED |
| Package shape | SQUARE |
| Package form | UNCASED CHIP |
| Polarity/channel type | N-CHANNEL |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | NO LEAD |
| Terminal location | UPPER |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
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