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MT46H32M32LFMA-5IT:B

Description
DDR DRAM, 32MX32, 5ns, CMOS, PBGA168, 12 X 12 MM, GREEN, PLASTIC, WFBGA-168
Categorystorage    storage   
File Size1MB,100 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
Download Datasheet Parametric View All

MT46H32M32LFMA-5IT:B Overview

DDR DRAM, 32MX32, 5ns, CMOS, PBGA168, 12 X 12 MM, GREEN, PLASTIC, WFBGA-168

MT46H32M32LFMA-5IT:B Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicron Technology
Parts packaging codeBGA
package instructionVFBGA, BGA168,23X23,20
Contacts168
Reach Compliance Codecompliant
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time5 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)200 MHz
I/O typeCOMMON
interleaved burst length2,4,8,16
JESD-30 codeS-PBGA-B168
JESD-609 codee1
length14 mm
memory density1073741824 bit
Memory IC TypeDDR DRAM
memory width32
Number of functions1
Number of ports1
Number of terminals168
word count33554432 words
character code32000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize32MX32
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeVFBGA
Encapsulate equivalent codeBGA168,23X23,20
Package shapeSQUARE
Package formGRID ARRAY, VERY THIN PROFILE, FINE PITCH
power supply1.8 V
Certification statusNot Qualified
refresh cycle8192
Maximum seat height0.8 mm
self refreshYES
Continuous burst length2,4,8,16
Maximum standby current0.00001 A
Maximum slew rate0.15 mA
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch0.5 mm
Terminal locationBOTTOM
width14 mm
1Gb: x16, x32 Mobile LPDDR SDRAM
Features
Mobile Low-Power DDR SDRAM
MT46H64M16LF – 16 Meg x 16 x 4 banks
MT46H32M32LF – 8 Meg x 32 x 4 banks
Features
• V
DD
/V
DDQ
= 1.70–1.95V
• Bidirectional data strobe per byte of data (DQS)
• Internal, pipelined double data rate (DDR)
architecture; two data accesses per clock cycle
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
• 4 internal banks for concurrent operation
• Data masks (DM) for masking write data; one mask
per byte
• Programmable burst lengths (BL): 2, 4, 8, or 16
• Concurrent auto precharge option is supported
• Auto refresh and self refresh modes
• 1.8V LVCMOS-compatible inputs
• Temperature-compensated self refresh (TCSR)
• Partial-array self refresh (PASR)
• Deep power-down (DPD)
• Status read register (SRR)
• Selectable output drive strength (DS)
• Clock stop capability
• 64ms refresh, 32ms for automotive temperature
Table 1: Key Timing Parameters (CL = 3)
Speed Grade
-5
-54
-6
-75
Clock Rate
200 MHz
185 MHz
166 MHz
133 MHz
Access Time
5.0ns
5.0ns
5.0ns
6.0ns
Options
• V
DD
/V
DDQ
– 1.8V/1.8V
• Configuration
– 64 Meg x 16 (16 Meg x 16 x 4
banks)
– 32 Meg x 32 (8 Meg x 32 x 4 banks)
• Addressing
– JEDEC-standard
• Plastic "green" package
– 60-ball VFBGA (8mm x 9mm)
1
– 90-ball VFBGA (8mm x 13mm)
2
• PoP (plastic "green" package)
– 168-ball WFBGA (12mm x 12mm)
2
• Timing – cycle time
– 5ns @ CL = 3 (200 MHz)
– 5.4ns @ CL = 3 (185 MHz)
– 6ns @ CL = 3 (166 MHz)
– 7.5ns @ CL = 3 (133 MHz)
• Power
– Standard I
DD2
/I
DD6
• Operating temperature range
– Commercial (0˚ to +70˚C)
– Industrial (–40˚C to +85˚C)
– Automotive (–40˚C to +105˚C)
3
• Design revision
Notes:
Marking
H
64M16
32M32
LF
BF
B5
MA
-5
-54
-6
-75
None
None
IT
AT
:B
1. Only available for x16 configuration.
2. Only available for x32 configuration.
3. Contact factory for availability.
PDF: 09005aef83d9bee4
1gb_ddr_mobile_sdram_t68m.pdf - Rev. J 1/14 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2009 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

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