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GT28F640C3TC100

Description
Flash, 4MX16, 100ns, PBGA48, CSP, MICRO, BGA-48
Categorystorage    storage   
File Size355KB,70 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Download Datasheet Parametric View All

GT28F640C3TC100 Overview

Flash, 4MX16, 100ns, PBGA48, CSP, MICRO, BGA-48

GT28F640C3TC100 Parametric

Parameter NameAttribute value
MakerNumonyx ( Micron )
Parts packaging codeBGA
package instructionCSP, MICRO, BGA-48
Contacts48
Reach Compliance Codeunknown
ECCN code3A991.B.1.A
Maximum access time100 ns
Other featuresUSER-SELECTABLE 3V OR 12V VPP; TOP BOOT BLOCK
startup blockTOP
JESD-30 codeR-PBGA-B48
length13 mm
memory density67108864 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals48
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize4MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE
Parallel/SerialPARALLEL
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
typeNOR TYPE
width10 mm
Base Number Matches1
3 Volt Advanced+ Boot Block Flash
Memory
28F800C3, 28F160C3, 28F320C3, 28F640C3 (x16)
Preliminary Datasheet
Product Features
s
s
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Flexible SmartVoltage Technology
— 2.7 V–3.6 V Read/Program/Erase
— 12 V for Fast Production Programming
High Performance
— 2.7 V–3.6 V: 70 ns Max Access Time
Optimized Architecture for Code Plus Data
Storage
— Eight 4-Kword Blocks, Top or Bottom
Locations
— Up to One Hundred-Twenty-Seven 32-
Kword Blocks
— Fast Program Suspend Capability
— Fast Erase Suspend Capability
Flexible Block Locking
— Lock/Unlock Any Block
— Full Protection on Power-Up
— WP# Pin for Hardware Block Protection
— V
PP
= GND Option
— V
CC
Lockout Voltage
Low Power Consumption
— 9 mA Typical Read Power
— 7 µA Typical Standby Power with
Automatic Power Savings Feature
12 V Fast Production Program
Extended Temperature Operation
— –40 °C to +85 °C
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128-bit Protection Register
— 64-bit Unique Device Identifier
— 64-bit User Programmable OTP Cells
Extended Cycling Capability
— Minimum 100,000 Block Erase Cycles
Supports Intel
®
Flash Data Integrator
Software
— Flash Memory Manager
— System Interrupt Manager
— Supports Parameter Storage, Streaming
Data (e.g., voice)
Automated Word/Byte Program and Block
Erase
— Command User Interface
— Status Registers
Cross-Compatible Command Support
— Intel Basic Command Set
— Common Flash Interface
Standard Surface Mount Packaging
— 48-Ball CSP Packages
— 64-Ball Easy BGA Packages
— 48-Lead TSOP Package
ETOX™ VII (0.18
µ)
Flash Technology
— 28F160/320/640C3xC
— 8-, 16- and 32-Mbit also exist on
ETOX™ VI (0.25
µ)
Flash Technology
The 3 Volt Advanced+ Boot Block Flash memory, manufactured on Intel’s latest 0.18 µ
technology, represents a feature-rich solution for low power applications. 3 Volt Advanced+
Boot Block Flash memory devices incorporate low voltage capability (2.7 V read, program and
erase) with high-speed, low-power operation. Flexible block locking allows any block to be
independently locked or unlocked. Add to this the Intel
®
Flash Data Integrator (IFDI) software
and you have a cost-effective, flexible, monolithic code plus data storage solution. Intel
®
3 Volt
Advanced+ Boot Block products will be available in 48-lead TSOP, 48-ball CSP, and 64-ball
Easy BGA packages. Additional information on this product family can be obtained by
accessing the Intel
®
Flash website: http://www.intel.com/design/flash.
Notice:
This document contains preliminary information on new products in production. The
specifications are subject to change without notice. Verify with your local Intel sales office that
you have the latest datasheet before finalizing a design.
Order Number: 290645-010
October 2000
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