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3CN00772CF

Description
Fiber Optic Device,
CategoryWireless rf/communication    Optical fiber   
File Size806KB,5 Pages
ManufacturerLumentum Operations LLC
Download Datasheet Parametric View All

3CN00772CF Overview

Fiber Optic Device,

3CN00772CF Parametric

Parameter NameAttribute value
Objectid4003534726
Reach Compliance Codeunknown
body width12.7 mm
body height9.2 mm
Body length or diameter20.83 mm
Built-in featuresTEC, THERMISTOR
Communication standardsITU-T-G.692, ITU-T-G652, ITU-T-G691, OC-192, SDH, SONET, STM-64, TELCORDIA GR-468-CORE
Connection TypeFC/PC CONNECTOR
data rate10000 Mbps
maximum descent time0.045 ns
Fiber optic equipment typesDFB LASER MODULE EMITTER
Installation featuresFLANGE MOUNT
Maximum operating temperature70 °C
Minimum operating temperature
Maximum operating wavelength1570 nm
Minimum operating wavelength1530 nm
Nominal operating wavelength1536 nm
Rise Time0.045 ns
Supply current85 mA
surface mountNO
Minimum threshold current5 mA
Transmission typeDIGITAL
PowerSource 1915 LMM
TM
10 Gb/s Digital Electro-Absorption Laser Module - 1600 ps/nm Application
TDM and WDM Applications
The PowerSource
TM
1915 LMM contains an DFB laser with monolithically integrated electro-
absorption modulator (EA-ILM). The modulation voltage is applied to the modulator section
while the DFB laser operates CW. Without the complexity of LiNbO
3
external modulators,
the PowerSource
TM
1915 LMM is dedicated to STM64/OC-192 bit rate with reduced size and
reduced cost. This device allows 10 Gb/s data transmission with an extinction ratio higher
than 10 dB and less than 2 V modulation voltage. The PowerSource
TM
1915 LMM is optimized
for 10 Gb/s TDM and WDM transmission systems supporting dispersion up to 1600 ps/nm.
FEATURES
• 7-Pin Package with Either GPO or
K Connector RF Input
• High Frequency RF Connector
Package with 50
Ω
RF Impedance
• InGaAsP Monolithically Integrated
DFB Laser and Modulator Chip
• Low Drive Voltage (≤ 2 Vpp)
• Very Low Dispersion Penalty Up to
80 km for 10 Gb/s Operation (up to
1600 ps/nm)
• Wavelength Selection According
to ITU-G.692
OPTICAL CHARACTERISTICS
Table 1
Parameter
Case Operating Temperature
Threshold Current
Operating Current
Sym
Tc
I
th
I
f
Conditions
CW, V
bias
= 0 V
WDM Applications, CW, V
bias
Single Channel Applications,
CW, V
bias
I
f
, V
mod
, [1] [2] [3]
CW, I
f
, V
bias
= 0 V
See [1] [3]
See [1] [3]
I
f
, [1] [2] [3]
See Table 3
See [3]
See [1] [3]
- 3 dB, V
bias
@ I
f
DC to 6 GHz
6 to 10 GHz
See [1] [2] [3]
See [1] 10%, 90%
I
f
, V = - 5 V
ΔT
= 50 °C, I
f
+20%(EOL)
Tc = 70 °C, V
bias
= - 1 V
ΔT
= 50 °C, I
f
+20%(EOL)
Tc = 70 °C, V
bias
= - 1 V
Tsubmount = 25 °C
Tsubmount = 25 °C
Min
0
5
55
60
-2
Max
70
35
85
100
+2
2
Unit
°C
mA
mA
mA
dBm
V
V
V
dB
nm
°C
dB
GHz
dB
Optical Output Power
APPLICATIONS
• Metro SONET/SDH and DWDM
Equipment
• Long-Haul WDM Power
Consumption/Size/Cost Optimized
Equipment
• Terminals for Submarine WDM
Transmission Systems
• STM-64 (Intra-Office, Short-Haul
and Long-Haul) and OC-192
(Short-Reach, Intermediate-Reach
and Long-Reach) Size Optimized
Transceiver and Transponder
P
ave
V
f
V
bias
V
mod
DER
λ
Twave
SMSR
S21
S11
S11
Laser Forward Voltage
Modulator Bias Voltage
Modulator Drive Voltage
Dynamic Extinction Ratio
Emission Wavelength
Laser Chip Temperature
Range for Tunability
Side Mode Suppression
Cut Off Frequency
RF Return Loss
-2
0
2
10
1529.55 1569.59
20
40
8
10
6
2
45
20
1500
1.3
2.5
9.5
3800
10.5
4000
35
dB
dB
ps
µA
A
V
K
Dispersion Penalty
Rise Time / Fall Time
Monitor Diode Current
TEC Current
TEC Voltage
Thermistor Resistance
Thermistor Coefficient
ΔS
Tr/Tf
I
m
I
t
V
t
R
TH
β
All limits start of life Tcase in the range [0°C ; 70°C], Tsubmount = Twave for WDM applications and Tsubmount = 25°C for
Single Channel applications, monitor bias = - 5 V, unless otherwise stated.
[1] BER = 10-10; 9.953 Gbit/s modulation; 223-1 PRBS; NZR line code.
[2] 1600 ps/nm dispersion assuming fiber with an average dispersion of 18 ps/nm/km @ 1550 nm.
D2301
[3] For WDM application Tsubmount = Twave. Twave is the chip temperature required to meet target wavelength (see table
3).
1

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