3CN00772EV datasheet, PDF - EEWORLD Datasheet

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3CN00772EV: DescriptionFiber Optic Device,; CategoryWireless rf/communication Optical fiber; File Size806KB，5 Pages; ManufacturerLumentum Operations LLC

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3CN00772EV Overview

Fiber Optic Device,

3CN00772EV Parametric

Parameter Name	Attribute value
Objectid	4003542932
Reach Compliance Code	unknown
body width	12.7 mm
body height	9.2 mm
Body length or diameter	20.83 mm
Built-in features	TEC, THERMISTOR
Communication standards	ITU-T-G.692, ITU-T-G652, ITU-T-G691, OC-192, SDH, SONET, STM-64, TELCORDIA GR-468-CORE
Connection Type	FC/PC CONNECTOR
data rate	10000 Mbps
maximum descent time	0.045 ns
Fiber optic equipment types	DFB LASER MODULE EMITTER
Installation features	FLANGE MOUNT
Maximum operating temperature	70 °C
Minimum operating temperature
Maximum operating wavelength	1570 nm
Minimum operating wavelength	1530 nm
Nominal operating wavelength	1561 nm
Rise Time	0.045 ns
Supply current	85 mA
surface mount	NO
Minimum threshold current	5 mA
Transmission type	DIGITAL

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PowerSource 1915 LMM

10 Gb/s Digital Electro-Absorption Laser Module - 1600 ps/nm Application

TDM and WDM Applications

The PowerSource

1915 LMM contains an DFB laser with monolithically integrated electro-

absorption modulator (EA-ILM). The modulation voltage is applied to the modulator section

while the DFB laser operates CW. Without the complexity of LiNbO

external modulators,

the PowerSource

1915 LMM is dedicated to STM64/OC-192 bit rate with reduced size and

reduced cost. This device allows 10 Gb/s data transmission with an extinction ratio higher

than 10 dB and less than 2 V modulation voltage. The PowerSource

1915 LMM is optimized

for 10 Gb/s TDM and WDM transmission systems supporting dispersion up to 1600 ps/nm.

FEATURES

• 7-Pin Package with Either GPO or

K Connector RF Input

• High Frequency RF Connector

Package with 50

RF Impedance

• InGaAsP Monolithically Integrated

DFB Laser and Modulator Chip

• Low Drive Voltage (≤ 2 Vpp)

• Very Low Dispersion Penalty Up to

80 km for 10 Gb/s Operation (up to

1600 ps/nm)

• Wavelength Selection According

to ITU-G.692

OPTICAL CHARACTERISTICS

Table 1

Parameter

Case Operating Temperature

Threshold Current

Operating Current

Sym

Conditions

CW, V

bias

= 0 V

WDM Applications, CW, V

bias

Single Channel Applications,

CW, V

bias

, V

mod

, [1] [2] [3]

CW, I

, V

bias

= 0 V

See [1] [3]

, [1] [2] [3]

See Table 3

See [3]

See [1] [3]

- 3 dB, V

bias

@ I

DC to 6 GHz

6 to 10 GHz

See [1] [2] [3]

See [1] 10%, 90%

, V = - 5 V

ΔT

= 50 °C, I

+20%(EOL)

Tc = 70 °C, V

bias

= - 1 V

ΔT

= 50 °C, I

+20%(EOL)

Tc = 70 °C, V

bias

= - 1 V

Tsubmount = 25 °C

Min

-2

Max

100

Unit

°C

dBm

°C

GHz

Optical Output Power

APPLICATIONS

• Metro SONET/SDH and DWDM

Equipment

• Long-Haul WDM Power

Consumption/Size/Cost Optimized

Equipment

• Terminals for Submarine WDM

Transmission Systems

• STM-64 (Intra-Ofﬁce, Short-Haul

and Long-Haul) and OC-192

(Short-Reach, Intermediate-Reach

and Long-Reach) Size Optimized

Transceiver and Transponder

ave

bias

mod

DER

Twave

SMSR

S21

S11

Laser Forward Voltage

Modulator Bias Voltage

Modulator Drive Voltage

Dynamic Extinction Ratio

Emission Wavelength

Laser Chip Temperature

Range for Tunability

Side Mode Suppression

Cut Off Frequency

RF Return Loss

-2

1529.55 1569.59

1500

1.3

2.5

9.5

3800

10.5

4000

µA

kΩ

Dispersion Penalty

Rise Time / Fall Time

Monitor Diode Current

TEC Current

TEC Voltage

Thermistor Resistance

Thermistor Coefficient

ΔS

Tr/Tf

All limits start of life Tcase in the range [0°C ; 70°C], Tsubmount = Twave for WDM applications and Tsubmount = 25°C for

Single Channel applications, monitor bias = - 5 V, unless otherwise stated.

[1] BER = 10-10; 9.953 Gbit/s modulation; 223-1 PRBS; NZR line code.

[2] 1600 ps/nm dispersion assuming fiber with an average dispersion of 18 ps/nm/km @ 1550 nm.

D2301

[3] For WDM application Tsubmount = Twave. Twave is the chip temperature required to meet target wavelength (see table

3).

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