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BZG04-56-TR3

Description
Trans Voltage Suppressor Diode, 56V V(RWM), Unidirectional,
CategoryDiscrete semiconductor    diode   
File Size42KB,5 Pages
ManufacturerTelefunken Semiconductor GmbH & Co Kg
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BZG04-56-TR3 Overview

Trans Voltage Suppressor Diode, 56V V(RWM), Unidirectional,

BZG04-56-TR3 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid103013563
Reach Compliance Codeunknown
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-609 codee0
polarityUNIDIRECTIONAL
Maximum repetitive peak reverse voltage56 V
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
BZG04...
Vishay Semiconductors
Silicon Transient Voltage Suppressors
Features
D
Glass passivated junction
D
High reliability
D
Stand–off voltage range 8.2V to 220V
D
Excellent clamping cabability
D
Fast response time (typ.
x1ps
from 0 to V
Zmin
)
Applications
D
Protection from high voltage, high energy
transients
15 811
Order Instruction
Type
BZG04–8V2
BZG04–8V2
Ordering Code
BZG04–8V2–TR
BZG04–8V2–TR3
Remarks
Tape and Reel (1.500 pcs)
Tape and Reel (6.000 pcs)
Absolute Maximum Ratings
Tj = 25°C
Parameter
Power dissipation
dissi ation
Non repetitive peak surge
power dissipation
Peak forward surge current
Junction temperature
Storage temperature range
Test Conditions
R
thJA
<25 K/W, T
amb
=100°C
R
thJA
<100 K/W, T
amb
=50°C
t
p
=10/1000µs,
T
j
=25°C prior to surge
10 ms single half sine wave
Symbol
P
V
P
V
P
ZSM
I
FSM
T
j
T
stg
Value
3
1.25
300
50
175
–65...+150
Unit
W
W
W
A
°C
°C
Maximum Thermal Resistance
Tj = 25°C
Parameter
Junction lead
Junction ambient
Test Conditions
mounted on epoxy–glass hard tissue, Fig. 1a
mounted on epoxy–glass hard tissue, Fig. 1b
mounted on Al–oxid–ceramic (Al
2
O
3
), Fig. 1b
Symbol
R
thJL
R
thJA
Value
25
150
125
100
Unit
K/W
K/W
Electrical Characteristics
Tj = 25°C
Parameter
Forward voltage
Test Conditions
I
F
=0.5A
Symbol
V
F
Min.
Typ.
Max.
1.2
Unit
V
Document Number 85594
Rev. 8, 10-Dec-01
www.vishay.com
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