Ordering number : ENN7670
TT2170LS
NPN Triple Diffused Planar Silicon Transistor
TT2170LS
Color TV Horizontal Deflection
Output Applications
Features
•
•
•
•
•
Package Dimensions
unit : mm
2079D
[TT2170LS]
10.0
3.2
3.5
7.2
High speed.
High breakdown voltage(VCBO=1500V).
High reliability(Adoption of HVP process).
Adoption of MBIT process.
On-chip damper diode.
4.5
2.8
16.1
16.0
3.6
0.9
1.2
14.0
1.2
0.75
0.7
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
Conditions
2.55
2.55
2.4
1 2 3
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220FI(LS)
0.6
Ratings
1500
800
5
5
12
2.0
25
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
Symbol
ICBO
ICES
VCEO(sus)
IEBO
Conditions
VCB=800V, IE=0
VCE=1500V, RBE=0
IC=100mA, IB=0
VBE=4V, IC=0
800
40
130
Ratings
min
typ
max
10
1.0
Unit
µA
mA
V
mA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
42004KC TS IM TA-100822 No.7670-1/4
TT2170LS
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
DC Current Gain
Diode Forward Voltage
Fall Time
Symbol
VCE(sat)
VBE(sat)
hFE1
hFE2
VF
tf
Conditions
IC=2.7A, IB=0.54A
IC=2.7A, IB=0.54A
VCE=5V, IC=0.5A
VCE=5V, IC=3A
IEC=4A
IC=1.8A, IB1=0.36A, IB2=--0.72A
10
5
8
2
0.3
V
µs
Ratings
min
typ
max
3
1.5
Unit
V
V
Switching Time Test Circuit
PW=20µs
D.C.≤1%
INPUT
IB1
IB2
RB
VR
OUTPUT
RL=111Ω
+
+
470µF
VCC=200V
50Ω
100µF
VBE= --5V
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
1
IC -- VCE
A
1.5
Collector Current, IC -- A
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
IC -- VBE
VCE=5V
Collector Current, IC -- A
0.6A
0.5A
7A 0.4A
1.0A 0.9A 0.8A 0.
0.3A
1.1A
0.2A
1.2A
0.1A
1.3A
0.05A
1.4A
IB=0
2
3
4
5
6
7
8
9
10
C
0
0.2
0.4
25
°
C
0.5
0
Ta=
120
°
1.0
0.6
--40
°
C
0.8
1.0
1.2
1.4
1.6
Collector-to-Emitter Voltage, VCE -- V
100
7
5
IT06478
10
7
5
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
IT06479
VCE (sat) -- IC
VCE=5V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
IC / IB=5
Ta= --
4
2
3
DC Current Gain, hFE
2
12
Ta=
0
°
C
C
25
°
0
°
C
--4
1.0
7
5
3
2
0.1
7
5
3
2
10
7
5
3
2
25
°
C
120°C
Ta= --40°C
1.0
0.1
2
3
5
7
1.0
2
3
5
7
10
0.01
0.1
2
3
5
7
120
°
3
2
25
°
C
5
10
IT06481
7
3
1.0
Collector Current, IC -- A
IT06480
Collector Current, IC -- A
C
0
°
C
No.7670-2/4
TT2170LS
10
7
SW Time -- IC
Switching Time, SW Time --
µs
VCC=200V
IC / IB1=5
IB2 / IB1=2
R load
tstg
10
7
5
3
2
SW Time -- IB2
VCC=200V
IC=1.8A
IB1=0.36A
R load
tstg
Switching Time, SW Time --
µs
5
3
2
1.0
7
5
3
2
1.0
7
5
tf
3
2
tf
2
3
5
7
1.0
2
3
5
10
IT06482
7
0.1
0.1
0.1
0.1
2
3
5
7
1.0
2
3
5
3
2
10
7
5
3
2
1.0
7
5
3
2
Forward Bias A S O
ICP=12A
Collector Current, IC -- A
3
2
10
Reverse Bias A S O
L=500µH
IB2= --1.0A
Tc=25°C
Single pulse
Base Current, IB2 -- A
7 10
IT06483
Collector Current, IC -- A
Collector Current, IC -- A
IC=5A
=1
PT
P
C=
7
5
3
2
1.0
7
5
3
2
0.1
10
00
µ
s
30
25
s
0
µ
W
s
1m
10
ms
DC
0.1
7
5
3
2
0.01
1.0
op
era
tio
Tc=25°C
Single pulse
2
3
5 7 10
2
3
5 7 100
2
Collector-to-Emitter Voltage, VCE -- V
3.0
n
3
5 7 1000
IT06484
2
3
5
7 100
2
3
5
7 1000
2
3
5
PC -- Ta
Collector-to-Emitter Voltage, VCE -- V
30
IT06485
PC -- Tc
Collector Dissipation, PC -- W
2.0
Collector Dissipation, PC -- W
2.5
25
20
1.5
No
15
he
at
1.0
sin
k
10
0.5
5
0
0
20
40
60
80
100
120
140
160
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT06486
Case Temperature, Tc --
°C
IT06487
No.7670-3/4
TT2170LS
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of April, 2004. Specifications and information herein are subject
to change without notice.
PS No.7670-4/4
京公网安备 11010802033920号
EEWORLD
