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FR103SGR0G

Description
Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon
CategoryDiscrete semiconductor    diode   
File Size418KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

FR103SGR0G Overview

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon

FR103SGR0G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionO-PALF-W2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY, LOW POWER LOSS
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-PALF-W2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.15 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
FR101SG - FR107SG
1.0AMP Glass Passivated Fast Recovery Rectifiers
A-405
Features
Glass passivated chip junction
High efficiency, Low VF
High current capability
High reliability
High surge current capability
Low power loss
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
Cases: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: Pure tin plated, lead free, solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: Color band denotes cathode end
High temperature soldering guaranteed: 260℃/10s
Weight: 0.22 grams
Ordering Information (example)
Part No.
FR101SG
Package
A-405
Packing
5K / 13" Reel
INNER
TAPE
52mm
Packing code
R0
Packing code
(Green)
R0G
Maximum Ratings and Electrical Characteristics
Rating at 25
ambient temperature unless otherwise specified.
Parameter
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method)
Maximum Instantaneous Forward Voltage (Note 1)
@1A
Maximum DC Reverse Current at
Rated DC Blocking Voltage
@ T
A
=25
@ T
A
=125
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θJA
T
J
T
STG
FR
FR
FR
FR
FR
FR
FR
101SG 102SG 103SG 104SG 105SG 106SG 107SG
50
100
200
400
600
800
1000
35
50
70
100
140
200
280
400
1
30
1.3
5
100
150
15
75
- 55 to + 150
- 55 to + 150
250
500
420
600
560
800
700
1000
Units
V
V
V
A
A
V
uA
uA
nS
pF
O
Maximum Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
C/W
O
O
C
C
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
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