BZW04P-5V8 thru BZW04-376
Vishay Semiconductors
formerly General Semiconductor
T
RANS
Z
ORB
®
Transient Voltage Suppressors
Peak Pulse Power
400W
Stand-off Voltage
5.8 to 376V
DO-204AL (DO-41 Plastic)
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Glass passivated junction
• 400W peak pulse power capabililty with a 10/1000µs
waveform, repetition rate (duty cycle): 0.01%
• Excellent clamping capability
• Low incremental surge resistance
• Very fast response time
• Typical I
D
less than 1µA above 10V rating
• High temperature soldering guaranteed:
265
O
C/10 seconds, 0.375” (9.5mm) lead length, 5lbs.
(2.3 kg) tension
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160 (4.1)
Mechanical Data
Case:
JEDEC DO-204AL molded plastic body over passi-
vated junction
Terminals:
Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
For unidirectional types the color band denotes
the cathode, which is positive with respect to the anode
under normal TVS operation
Mounting Position:
Any
Weight:
0.012 oz., 0.3 g
Packaging Codes – Options (Antistatic):
51 – 1K per Bulk box, 10K/carton
54 – 5.5K per 13" paper Reel
(52mm horiz. tape), 16.5K/carton
73 – 3K per horiz. tape & Ammo box, 30K/carton
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
Dimensions in inches and (millimeters)
Devices for Bidirectional Applications
For bi-directional use add suffix letter “B” (e.g. BZW04P-
6V4B). Electrical characteristics apply in both directions.
Maximum Ratings and Thermal Characteristics
(T
Parameter
Peak pulse power dissipation with a 10/1000µs waveform
(Note 1, Fig. 1)
A
= 25°C unless otherwise noted)
Symbol
P
PPM
I
PPM
P
M(AV)
I
FSM
V
F
T
J
, T
STG
Limit
Minimum 400
See Next Table
1.0
40
3.5/5.0
–55 to +175
Unit
W
A
W
A
V
°C
Peak pulse current with a 10/1000µs waveform
Steady state power dissipation
at T
L
= 75
O
C, lead lengths 0.375” (9.5mm)
Peak forward surge current, 8.3ms
single half sine-wave unidirectional only
(Note 1)
(Note 2)
(Note 3)
Maximum instantaneous forward voltage
at 25A for unidirectional only
(Note 4)
Operating junction and storage temperature range
Notes:
(1) Non-repetitive current pulse, per Fig.3 and derated above T
A
= 25°C per Fig. 2
(2) Mounted on copper pad area of 1.6 x 1.6” (40 x 40mm) per Fig. 5
(3) Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
(4) V
F
= 3.5V for BZW04P(-)188 & below; V
F
= 5.0V for BZW04P(-)213 & above
Document Number 88316
21-Jun-02
www.vishay.com
1
BZW04P-5V8 thru BZW04-376
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
(Con’t.)
Ratings at 25°C ambient temperature unless otherwise specified.
Part Number
Unidirectional
Bidirectional
Breakdown Voltage
V
(BR)
at I
T
(1)
(V)
Min.
Max.
Test
Current
I
T
(mA)
Stand-off
Voltage
V
WM
(Volts)
Maximum
Reverse
Leakage
at V
WM
I
D
(µA)
(4)
Maximum
Peak Pulse
Current
I
PPM
(Amps)
(2)
Maximum
Clamping
Voltage at
I
PPM
V
C
(Volts)
Maximum
Temperature
Coefficient
of V
(BR)
(% / °C)
BZW04P53
BZW04-53
BZW04P58
BZW04-58
BZW04P64
BZW04-64
BZW04P70
BZW04-70
BZW04P78
BZW04-78
BZW04P85
BZW04-85
BZW04P94
BZW04-94
BZW04P102
BZW04-102
BZW04P110
BZW04-110
BZW04P128
BZW04-128
BZW04P136
BZW404-136
BZW04P145
BZW04-145
BZW04P154
BZW04-154
BZW04P171
BZW04-171
BZW04P188
BZW04-188
BZW04P213
BZW04-213
BZW04P239
BZW04-239
BZW04P256
BZW04-256
BZW04P273
BZW04-273
BZW04P299
BZW04-299
BZW04P342
BZW04-342
BZW04P376
BZW04-376
Notes:
(1)
(2)
(3)
(4)
BZW04P53B
BZW04-53B
BZW04P58B
BZW04-58B
BZW04P64B
BZW04P64B
BZW04P70B
BZW04-70B
BZW04P78B
BZW04-78B
BZW04P85B
BZW04-85B
BZW04P94B
BZW04-94B
BZW04P102B
BZW04-102B
BZW04P110B
BZW04-110B
BZW04P128B
BZW04-128B
BZW04P136B
BZW404-136B
BZW04P145B
BZW04-145B
BZW04P154B
BZW04-154B
BZW04P171B
BZW04-171B
BZW04P188B
BZW04-188B
BZW04P213B
BZW04-213B
BZW04P239B
BZW04-239B
BZW04P256B
BZW04-256B
BZW04P273B
BZW04-273B
BZW04P299B
BZW04-299B
BZW04P342B
BZW04-342B
BZW04P376B
BZW04-376B
58.9
58.9
64.6
64.6
71.3
71.3
77.9
77.9
86.5
86.5
95.0
95.0
105
105
114
114
124
124
143
143
152
152
161
161
171
171
190
190
209
209
237
237
266
266
285
285
304
304
332
332
380
380
418
418
68.2
65.1
74.8
71.4
82.5
78.8
90.2
86.1
100
95.5
110
105
121
116
132
126
143
137
165
158
176
168
187
179
198
189
220
210
242
231
275
263
308
294
330
315
352
336
385
368
440
420
484
462
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
53.0
53.0
58.1
58.1
64.1
64.1
70.1
70.1
78.0
78.0
85.5
85.5
94.0
94.0
102
102
111
111
128
128
136
136
145
145
154
154
171
171
188
188
213
213
239
239
256
256
273
273
299
299
342
342
376
376
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
4.7
4.7
4.3
4.3
3.9
3.9
3.5
3.5
3.2
3.2
2.9
2.9
2.6
2.6
2.4
2.4
2.2
2.2
2.0
2.0
1.8
1.8
1.7
1.7
1.6
1.6
1.5
1.5
1.4
1.4
1.2
1.2
1.1
1.1
1.0
1.0
0.90
0.90
0.80
0.80
0.75
0.75
0.67
0.67
85.0
85.0
92.0
92.0
103
103
113
113
125
125
137
137
152
152
165
165
179
179
207
207
219
219
234
234
246
246
274
274
301
301
344
344
384
384
414
414
438
438
482
482
548
548
603
603
0.104
0.104
0.104
0.104
0.105
0.105
0.105
0.105
0.105
0.105
0.106
0.106
0.107
0.107
0.107
0.107
0.107
0.107
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
Pulse test: t
p
≤
50ms
Surge current waveform per Fig. 3 and derated per Fig. 2
All terms and symbols are consistent with ANSI/IEEE C62.35
For bidirectional types having V
WM
of 10 volts and less, the I
D
limit is doubled
Document Number 88316
21-Jun-02
www.vishay.com
3
BZW04P-5V8 thru BZW04-376
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 -- Peak Pulse Power Rating Curve
Peak Pulse Power (P
PP
) or Current (I
PPM
)
Derating in Percentage, %
P
PPM
-- Peak Pulse Power (kW)
100
Non-repetitive Pulse
Waveform shown in Fig. 3
T
A
= 25°C
10
100
Fig. 2 -- Pulse Derating Curve
75
1
50
0.1
0.1µs
1.0µs
10µs
100µs
1.0ms
10ms
25
td -- Pulse Width (sec.)
Fig. 3 -- Pulse Waveform
150
0
I
PPM
-- Peak Pulse Current,
% I
RSM
tr = 10µsec.
Peak Value
I
PPM
Half Value — I
PPM
2
100
T
J
= 25°C
Pulse Width (td) is defined
as the point where the
peak current decays to
50% of I
PPM
10,000
0
25
50
75
100
125
150
175
200
T
A
-- Ambient Temperature (°C)
Fig. 4 -- Typical Junction Capacitance
C
J
-- Junction Capacitance (pF)
T
J
= 25°C
f = 1.0MHz
Vsig = 50mVp-p
Measured at
Zero Bias
1000
50
10/1000µsec. Waveform
as defined by R.E.A.
td
0
0
1.0
2.0
3.0
4.0
t -- Time (ms)
Fig. 5 -- Steady State Power Derating Curve
1.00
100
PM
(AV)
, Steady State
Power Dissipation (W)
L = 0.375" (9.5mm)
Lead Lengths
0.75
60 H
Z
Resistive or
Inductive Load
Measured at
Stand-Off
Voltage, V
WM
0.50
1.6 x 1.6 x .040"
(40 x 40 x 1mm)
Copper Heat Sinks
10
1
10
100
1000
V
(BR)
-- Breakdown Voltage (V)
0.25
0
Fig. 6 -- Maximum Non-Repetitive Forward
Surge Current Uni-Directional Only
I
FSM
-- Peak Forward Surge Current (A)
100
125
150
175
200
200
T
J
= T
J
max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
0
25
50
75
T
L
-- Lead Temperature (°C)
Fig. 7 -- Typical Reverse Leakage Characteristics
100
100
I
D
-- Instantaneous Reverse
Leakage Current (µA)
10
Measured at Devices
Stand-off Voltage, V
WM
T
A
= 25°C
50
1
0.1
0.01
0
100
200
300
400
500
10
1
5
10
50
100
V
(BR)
-- Breakdown Voltage (V)
www.vishay.com
4
Number of Cycles at 60 Hz
Document Number 88316
21-Jun-02
Analog electronics
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