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FHR2216

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size91KB,2 Pages
ManufacturerFenghua (HK) Electronics Ltd.
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FHR2216 Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN

FHR2216 Parametric

Parameter NameAttribute value
MakerFenghua (HK) Electronics Ltd.
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)120
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
Base Number Matches1
广东肇庆风华新谷微电子有限公司
广东省肇庆市风华路
18
号风华电子工业城三号楼一楼
TEL:0758-2865088 2865091
FAX:0758-2849749
Resistive Transistors
带阻三极管
NPN Silicon (FHRC110/FHR2216)
MAXIMUM RATINGS
(T
a
=25℃)
最大额定值
CHARACTERISTIC
特性参数
Collector-Base Voltage
集电极-基极电压
Collector-Emitter Voltage
集电极-发射极电压
Emitter-Base Voltage
发射极-基极电压
Collector Current—Continuous
集电极电流-连续
Collector Power Dissipation
集电极耗散功率
Junction Temperature
结温
Storage Temperature Range
储存温度
Symbol
符号
V
CBO
V
CEO
V
EBO
Ic
P
C
T
j
T
stg
Rating
额定值
50
50
5.0
100
300
150
-55½150
Unit
单½
Vdc
Vdc
Vdc
mAdc
mW
DEVICE MARKING
打标
FHRC110=NK
ELECTRICAL CHARACTERISTICS
电特性
(T
A
=25
unless otherwise noted
如无特殊说明,温度为
25
)
Characteristic
特性参数
Collector Cutoff Current
集电极截止
电流
Emitter Cutoff Current
发射极截止电
DC Current Gain
直流电流增益
CollectorEmitter Saturation Voltage
集电极发射极饱和压降
Transition Frequency
特征频率
Input Resistance
输入电阻
Symbol
符号
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
R
1
Test Condition
测试条件
V
CB
=50V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=5V,I
C
=1 mA
I
C
=10mA,I
B
=0.5mA
V
CE
=10V,I
C
=5mA
Min
120
3.29
TYP
典型
0.1
250
4.7
Max
0.1
0.1
0.3
6.11
Unit
½
μA
μA
V
MHz
Page 0 of
3
*2005
年第
2
版*
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