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DB3X316J

Description
Mixer Diode, HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, 3 PIN
CategoryDiscrete semiconductor    diode   
File Size435KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
Download Datasheet Parametric View All

DB3X316J Overview

Mixer Diode, HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, 3 PIN

DB3X316J Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerPanasonic
package instructionR-PDSO-G3
Contacts3
Manufacturer packaging codeMINI3-G3-B
Reach Compliance Codeunknown
ECCN codeEAR99
Diode typeMIXER DIODE
Maximum forward voltage (VF)0.55 V
JESD-30 codeR-PDSO-G3
Maximum non-repetitive peak forward current1 A
Number of terminals3
Maximum operating temperature125 °C
Maximum output current0.1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
surface mountYES
technologySCHOTTKY
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
This product complies with the RoHS Directive (EU 2002/95/EC).
DB3X316J
Silicon epitaxial planar type
For small current rectification
Features
Short reverse recovery time t
rr
Low forward voltage V
F
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Package
Code
Mini3-G3-B
Name
Pin
1: Cathode-1
2: Cathode-2
Basic Part Number
Dual DB2S316 (Common anode)
3: Anode-1
Anode-2
Marking Symbol: 5G
Internal Connection
3
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Reverse voltage
Repetitive peak reverse voltage
Forward current (Average)
Peak forward current
Single
Double
Single
Double
Symbol
V
R
V
RRM
I
F(AV)
I
FM
I
FSM
T
j
T
stg
Rating
30
30
100
70
300
200
1
125
–55 to +125
Unit
V
V
mA
mA
A
°C
°C
1
2
Non-repetitive peak reverse surge voltage
*
Junction temperature
Storage temperature
Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
*
Symbol
V
F
I
R
C
t
t
rr
I
F
= 100 mA
V
R
= 30 V
V
R
= 10 V, f = 1 MHz
I
F
= I
R
=100 mA, I
rr
= 0.1
×
I
R
,
R
L
= 100
Ω 
2
0.8
Conditions
Min
Typ
Max
0.55
15
Unit
V
mA
pF
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz
*: t
rr
measurement circuit
Bias Application Unit (N-50BU)
t
r
10%
Input Pulse
t
p
t
I
F
Output Pulse
t
rr
t
A
V
R
Wave Form Analyzer
(SAS-8130)
R
i
= 50
ZKH00345BED
90%
t
p
= 2
µs
t
r
= 0.35 ns
δ
= 0.05
Pulse Generator
(PG-10N)
R
s
= 50
Publication date: April 2010
I
rr
=
0.1
×
I
R
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100
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