BAR88...
Silicon PIN Diode
•
Optimized for low current antenna switches
in hand held applications
•
Very low forward resistance
(typ. 1.5
Ω
@
I
F
= 1 mA)
•
Low capacitance at zero volt reverse bias
at frequencies above 1 GHz (typ. 0.28 pF)
•
Very low signal distortion
•
Pb-free (RoHS compliant) package
BAR88-02LRH
BAR88-02V
Type
BAR88-02LRH
BAR88-02V
Package
TSLP-2-7
SC79
Configuration
single, leadless
single
L
S
(nH)
0.4
0.6
Marking
U8
U
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Diode reverse voltage
Forward current
Total power dissipation
BAR88-02LRH
T
s
≤
133°C
BAR88-02V,
T
s
≤
123°C
Junction temperature
Operating temperature range
Storage temperature
T
j
T
op
T
stg
Symbol
V
R
I
F
P
tot
250
250
150
-55 ... 125
-55 ... 150
°C
Value
80
100
Unit
V
mA
mW
1
2011-06-17
BAR88...
Thermal Resistance
Parameter
Junction - soldering point
1)
BAR88-02LRH
BAR88-02V
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
DC Characteristics
Breakdown voltage
I
(BR)
= 5 µA
Reverse current
V
R
= 60 V
Forward voltage
I
F
= 1 mA
I
F
= 100 mA
1
For
Symbol
R
thJS
Value
≤
65
≤
105
Unit
K/W
Symbol
min.
V
(BR)
I
R
V
F
-
-
80
-
Values
typ.
-
-
max.
-
50
Unit
V
nA
V
0.75
0.95
0.9
1.2
calculation of
R
thJA
please refer to Application Note Thermal Resistance
2
2011-06-17
BAR88...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
AC Characteristics
Diode capacitance
V
R
= 1 V,
f
= 1 MHz
V
R
= 0 V,
f
= 100 MHz
V
R
= 0 V,
f
= 1 GHz
V
R
= 0 V,
f
= 1.8 GHz
Reverse parallel resistance
V
R
= 0 V,
f
= 100 MHz
V
R
= 0 V,
f
= 1 GHz
V
R
= 0 V,
f
= 1.8 GHz
Forward resistance
I
F
= 1 mA,
f
= 100 MHz
I
F
= 5 mA,
f
= 100 MHz
I
F
= 10 mA,
f
= 100 MHz
Charge carrier life time
I
F
= 10 mA,
I
R
= 6 mA, measured at
I
R
= 3 mA,
R
L
= 100
Ω
I-region width
Insertion loss
1)
I
F
= 1 mA,
f
= 1.8 GHz
I
F
= 5 mA,
f
= 1.8 GHz
I
F
= 10 mA,
f
= 1.8 GHz
Isolation
1)
V
R
= 0 V,
f
= 0.9 GHz
V
R
= 0 V,
f
= 1.8 GHz
V
R
= 0 V,
f
= 2.45 GHz
1
BAR88-02LRH
Symbol
min.
C
T
-
-
-
-
R
P
-
-
-
r
f
-
-
-
τ
rr
Values
typ.
max.
Unit
pF
0.3
0.4
0.28
0.25
65
2.5
1.5
1.5
0.8
0.6
500
0.4
-
-
-
k
Ω
-
-
-
Ω
2.5
-
-
-
ns
-
W
I
I
L
-
-
-
-
13
0.11
0.07
0.06
15
11
9
-
-
-
-
-
-
-
µm
dB
I
SO
-
-
-
in series configuration,
Z
= 50
Ω
3
2011-06-17
MCU
京公网安备 11010802033920号
EEWORLD
