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3LP03SS

Description
TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,250MA I(D),SOT-416VAR
CategoryDiscrete semiconductor    The transistor   
File Size34KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

3LP03SS Overview

TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,250MA I(D),SOT-416VAR

3LP03SS Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codecompliant
ConfigurationSingle
Maximum drain current (Abs) (ID)0.25 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)0.15 W
surface mountYES
Base Number Matches1
Ordering number : EN8649
3LP03SS
P-Channel Silicon MOSFET
3LP03SS
Features
General-Purpose Switching Device
Applications
Low ON-resistance.
High-speed switching.
2.5V drive.
High resistance to damage from ESD (TYP 300V)
[with a protection diode connected between the gate and source].
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage (*1)
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10µs, duty cycle≤1%
Conditions
Ratings
--30
--10
--0.25
--1
0.15
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
(*1) : Note, when designing a circuit using this product, that it has a gate (oxide film) protection diode connected only between its gate and source.
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
Conditions
ID=--1mA, VGS=0V
VDS=-
-30V, VGS=0V
VGS=--8V, VDS=0V
VDS=-
-10V, ID=--100µA
VDS=-
-10V, ID=--120mA
ID=--120mA, VGS=--4V
ID=--60mA, VGS=--2.5V
ID=--10mA, VGS=--1.5V
VDS=-
-10V, f=1MHz
VDS=-
-10V, f=1MHz
VDS=-
-10V, f=1MHz
Ratings
min
--30
--1
--1
--0.4
0.24
0.4
1.5
2.0
4.0
40
8
4.5
1.9
2.8
8.0
--1.4
typ
max
Unit
V
µA
µA
V
S
pF
pF
pF
Marking : XG
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
83005PE MS IM TA-101198 No.8649-1/4
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