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5962-8959849QTC

Description
Standard SRAM
Categorystorage    storage   
File Size714KB,17 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Download Datasheet Parametric View All

5962-8959849QTC Overview

Standard SRAM

5962-8959849QTC Parametric

Parameter NameAttribute value
Objectid4001777206
package instructionFLATPACK-32
Reach Compliance Codecompliant
Country Of OriginThailand
ECCN code3A001.A.2.C
YTEOL4
Maximum access time40 ns
I/O typeCOMMON
JESD-30 codeR-PDFP-F32
JESD-609 codee4
length20.83 mm
memory density1048576 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of ports1
Number of terminals32
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize128KX8
Output characteristics3-STATE
ExportableYES
Package body materialPLASTIC/EPOXY
encapsulated codeDFP
Encapsulate equivalent codeFL32,.4
Package shapeRECTANGULAR
Package formFLATPACK
Parallel/SerialPARALLEL
Certification statusQualified
Filter levelMIL-PRF-38535 Class Q
Maximum seat height2.98 mm
Maximum standby current0.055 A
Minimum standby current2 V
Maximum slew rate0.115 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal surfaceNickel/Gold (Ni/Au)
Terminal formFLAT
Terminal pitch1.27 mm
Terminal locationDUAL
width10.41 mm
AT65609EHV
Rad Hard, 5V, 128K x 8 Very Low Power CMOS SRAM
DATASHEET
Features
Asynchronous SRAM
Operating Voltage: 5V
Read Access Time: 40 ns
Write Cycle Time: 30 ns
Very Low Power Consumption (Pre-RAD)
Active: 275 mW (Max)
Standby: 44 mW (Max)
Wide Temperature Range: -55°C to +125°C
400 Mils Width Packages: FP32 and SB32
TTL Compatible Inputs and Outputs
No Single Event Latch-up below a LET Threshold of 80 MeV/mg/cm
2
@125°C
Radiation Tolerance
(1)
Tested up to a Total Dose of 300 krads (Si)
RHA capability of 100 krad (Si) according to MIL STD 883 Method 1019
ESD better than 4000V
Deliveries at least equivalent to QML procurement according to MIL-PRF38535
Pin to pin compatible with M65608E
Note:
1.
tolerance to MBU’s may need to be enhanced by the application
Description
The AT65609EHV is a very low power CMOS static RAM organized as 131072 x 8 bits.
Utilizing an array of six transistors (6T) memory cells, the AT65609EHV combines an
extremely low standby supply current with a fast access time over the full military
temperature range. The high stability of the 6T cell provides an excellent protection
against soft errors due to noise.
The AT65609EHV is processed according to the methods of the latest revision of the
MIL PRF 38535 or ESCC 9000.
It is manufactured on the same process as the MH1RT Rad-Hard sea of gates series.
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