IRGPC30UD2-E datasheet, PDF - EEWORLD Datasheet

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IRGPC30UD2-E: DescriptionInsulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size149KB，10 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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IRGPC30UD2-E Overview

Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN

IRGPC30UD2-E Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
Parts packaging code	TO-247AD
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	compliant
Other features	ULTRA FAST SOFT RECOVERY
Shell connection	COLLECTOR
Maximum collector current (IC)	23 A
Collector-emitter maximum voltage	600 V
Configuration	SINGLE WITH BUILT-IN DIODE
JEDEC-95 code	TO-247AD
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	225
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	380 ns
Nominal on time (ton)	111 ns
Base Number Matches	1

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PD - 9.1112

IRGPC30UD2

INSULATED GATE BIPOLAR TRANSISTOR

WITH ULTRAFAST SOFT RECOVERY DIODE

Features

• Switching-loss rating includes all "tail" losses

• HEXFRED

soft ultrafast diodes

• Optimized for high operating frequency (over 5kHz)

See Fig. 1 for Current vs. Frequency curve

UltraFast CoPack IGBT

CES

= 600V

CE(sat)

≤

3.0V

= 15V, I

= 12A

n-channel

Description

Co-packaged IGBTs are a natural extension of International Rectifier's well

known IGBT line. They provide the convenience of an IGBT and an ultrafast

recovery diode in one package, resulting in substantial benefits to a host of

high-voltage, high-current, motor control, UPS and power supply applications.

TO -2 47AC

Absolute Maximum Ratings

Parameter

CES

@ T

= 25°C

@ T

= 100°C

@ T

= 100°C

@ T

= 25°C

@ T

= 100°C

STG

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Gate-to-Emitter Voltage

Maximum Power Dissipation

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw.

Max.

600

± 20

100

-55 to +150

300 (0.063 in. (1.6mm) from case)

10 lbf•in (1.1 N•m)

Units

°C

Thermal Resistance

Parameter

θJC

θCS

θJA

Junction-to-Case - IGBT

Junction-to-Case - Diode

Case-to-Sink, flat, greased surface

Junction-to-Ambient, typical socket mount

Weight

Min.

------

-----

------

Typ.

------

0.24

-----

6 (0.21)

Max.

1.2

2.5

------

Units

°C/W

g (oz)

IRGPC30UD2-E Related Products

	IRGPC30UD2-E	IRGPC30UD2-EPBF
Description	Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN	Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN
Is it lead-free?	Contains lead	Lead free
Is it Rohs certified?	incompatible	conform to
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
Parts packaging code	TO-247AD	TO-247AD
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Contacts	3	3
Reach Compliance Code	compliant	compliant
Other features	ULTRA FAST SOFT RECOVERY	ULTRA FAST SOFT RECOVERY
Shell connection	COLLECTOR	COLLECTOR
Maximum collector current (IC)	23 A	23 A
Collector-emitter maximum voltage	600 V	600 V
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
JEDEC-95 code	TO-247AD	TO-247AD
JESD-30 code	R-PSFM-T3	R-PSFM-T3
JESD-609 code	e0	e3
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	225	250
Polarity/channel type	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	TIN LEAD	MATTE TIN OVER NICKEL
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	30	30
transistor applications	POWER CONTROL	POWER CONTROL
Transistor component materials	SILICON	SILICON
Nominal off time (toff)	380 ns	380 ns
Nominal on time (ton)	111 ns	111 ns
Base Number Matches	1	1

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