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BF998RB-GS08

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size404KB,10 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

BF998RB-GS08 Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

BF998RB-GS08 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)0.03 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeDUAL GATE, DEPLETION MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.2 W
surface mountYES
Base Number Matches1
BF998 / BF998R / BF998RW
Vishay Semiconductors
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
2
1
Features
Integrated gate protection diodes
Low noise figure
e3
Low feedback capacitance
High cross modulation performance
Low input capacitance
High AGC-range
High gain
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
SOT-143
3
1
4
2
SOT-143R
4
1
3
2
SOT-343R
Applications
Input and mixer stages in UHF tuners.
4
3
19216
Electrostatic sensitive device.
Observe precautions for handling.
Mechanical Data
Typ:
BF998
Case:
SOT-143 Plastic case
Weight:
approx. 8.0 mg
Marking:
MO
Pinning:
1 = Source, 2 = Drain,
3 = Gate 2, 4 = Gate 1
Typ:
BF998R
Case:
SOT-143R Plastic case
Weight:
approx. 8.0 mg
Marking:
MOR
Pinning:
1 = Source, 2 = Drain,
3 = Gate 2, 4 = Gate 1
Typ:
BF998RW
Case:
SOT-343R Plastic case
Weight:
approx. 6.0 mg
Marking:
WMO
Pinning:
1 = Source, 2 = Drain,
3 = Gate 2, 4 = Gate 1
Parts Table
Part
BF998
BF998A
BF998B
BF998R
BF998RA
BF998RB
BF998RW
BF998RAW
BF998RBW
Ordering Code
BF998A-GS08 or BF998B-GS08
BF998A-GS08
BF998B-GS08
BF998RA-GS08 or BF998RB-GS08
BF998RA-GS08
BF998RB-GS08
BF998RAW-GS08 or BF998RBW-GS08
BF998RAW-GS08
BF998RBW-GS08
MO
MO
MO
MOR
MOR
MOR
WMO
WMO
WMO
Marking
SOT143
SOT143
SOT143
SOT143R
SOT143R
SOT143R
SOT343R
SOT343R
SOT343R
Package
Document Number 85011
Rev. 1.6, 31-Aug-05
www.vishay.com
1

BF998RB-GS08 Related Products

BF998RB-GS08 BF998R-GS08 BF998B-GS08
Description Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Reach Compliance Code unknown unknown unknown
Configuration Single Single Single
Maximum drain current (Abs) (ID) 0.03 A 0.03 A 0.03 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE
Maximum operating temperature 150 °C 150 °C 150 °C
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 0.2 W 0.2 W 0.2 W
surface mount YES YES YES
Base Number Matches 1 1 1
Maker - Vishay Vishay
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