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PACDN043T

Description
UNIDIRECTIONAL, 6 ELEMENT, SILICON, TVS DIODE
Categorysemiconductor    Discrete semiconductor   
File Size84KB,2 Pages
ManufacturerCALMIRCO
Websitehttp://www.calmicro.com/
Download Datasheet View All

PACDN043T Overview

UNIDIRECTIONAL, 6 ELEMENT, SILICON, TVS DIODE

CALIFORNIA MICRO DEVICES
PACDN042/043/
044/045/046
TRANSIENT VOLTAGE SUPPRESSOR ARRAYS
Features
• 2, 3, 4, 5, or 6 transient voltage suppressors in a single
surface-mount package.
• Compact SMT packages save board space and ease
layout in space critical applications compared to
discrete solutions.
• In-system ESD protection to 20kV contact discharge
per IEC 61000-4-2 International Standard.
Product Description
The PACDN042, PACDN043, PACDN044, PACDN045, and PACDN046 are transient voltage suppressor arrays that provide a very
high level of protection for sensitive electronic components that may be subjected to electrostatic discharge (ESD). The devices
are designed and characterized to safely dissipate ESD strikes at levels well beyond the maximum requirements set forth in the
IEC 61000-4-2 International Standard (Level 4, 8kV contact discharge). All pins are rated at 20kV ESD using the IEC 61000-4-
2 contact discharge method.
Using the MIL-STD-883D (Method 3015) specification for Human Body Model (HBM) ESD, all pins are protected for contact
discharges to greater than 30kV.
Schematic Configurations
Applications
• ESD protection of PC ports, e.g. USB port.
• Protection of interface ports or IC pins
which are exposed to high levels of ESD.
Parameter
Reverse Stand-off Voltage, I = 10uA
Signal Clamp Voltage:
Positive Clamp, 10mA
Negative Clamp, 10mA
In-system ESD withstand voltage*:
Human Body Model (MIL-STD-883D, method 3015)
IEC 61000-4-2, contact discharge method
Clamping voltage during ESD discharge
Positive
MIL-STD-883D (Method 3015), 8kV
Negative
Capacitance @ 2.5V dc, 1 MHz
Temperature Range:
Operating
Storage
Package Power Rating: SOT23, SOT23-5, SOT-143
TSSOP, MSOP
STANDARD SPECIFICATIONS
Min.
5.5
5.6
-1.2
±30
±20
Typ.
Max.
Unit
V
V
V
kV
kV
V
V
pF
6.8
-0.8
8.0
-0.4
12
-8
30
-40
-65
85
150
0.225
0.5
°C
W
W
* ESD applied between channel pin and ground, one at a time. All other channels are open. All GND pins grounded.
This parameter is guaranteed by design and characterization..
Note: ‘GND’ in this document refers to the lower supply voltage.
© 2000 California Micro Devices Corp. All rights reserved.
8/25/2000
C1470800
215 Topaz Street, Milpitas, California 95035
Tel: (408) 263-3214
Fax: (408) 263-7846
www.calmicro.com
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