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PA905C6

Description
20 A, 600 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size83KB,3 Pages
ManufacturerFUJI
Websitehttp://www.fujielectric.co.jp/eng/fdt/scd/
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PA905C6 Overview

20 A, 600 V, SILICON, RECTIFIER DIODE

PA905C6
(20A)
LOW LOSS SUPER HIGH SPEED RECTIFIER
15.5
Max.
5.0
±0.1
13.0
10.0
( 600V / 20A )
Outline drawings, mm
Ø3.2
±0.1
4.5
±0.2
2.0
7.2
±0.1
15
±0.2
1
2
3
3.0
±0.2
1.6
1.1
14.5
±0.2
2.2
1.6
1.5
19.5
±0.2
0.5
1.5
5.45 5.45
Features
Low V
F
Super high speed switching
High reliability by planer design
JEDEC
EIAJ
SC-65
Connection diagram
Applications
High speed power switching
1
2
3
Maximum ratings and characteristics
Absolute maximum ratings
Item
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Average output current
Surge current
Operating junction temperature
Storage temperature
Symbol
V
RRM
V
RSM
I
O
I
FSM
T
j
T
stg
Square wave, duty=1/2, Tc=100°C
Sine wave 10ms
Conditions
Rating
600
600
20*
80
-40 to +150
-40 to +150
Unit
V
V
A
A
°C
°C
*
Average forward current of centertap full wave connection
Electrical characteristics (Ta=25°C Unless otherwise specified )
Item
Forward voltage drop
Reverse current
Reverse recovery time
Thermal resistance
Symbol
V
FM
I
RRM
t
rr
R
th(j-c)
Conditions
I
FM
=10A
V
R
=V
RRM
I
F
=0.1A, I
R
=0.2A, I
rec
=0.05A
Junction to case
Max.
1.7
500
50
1.2*
Unit
V
µA
ns
°C/W
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