2N1149 datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> 2N1149

2N1149: DescriptionSmall Signal Bipolar Transistor, 0.025A I(C), 1-Element, NPN, Silicon, TO-22VAR, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size92KB，1 Pages; ManufacturerSemiconductor Technology Inc

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2N1149 Overview

Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, NPN, Silicon, TO-22VAR, 3 PIN

2N1149 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Parts packaging code	TO-22
package instruction	CYLINDRICAL, R-XBCY-W3
Contacts	3
Reach Compliance Code	compliant
Maximum collector current (IC)	0.025 A
Configuration	Single
Minimum DC current gain (hFE)	13
JESD-30 code	R-XBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	175 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.15 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	12 MHz
Base Number Matches	1

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LOW-POWER SILICON NPN

Item

Number

Part Number

Manufacturer

V(BR)CEO

(V)

hFE

Max

(A)

(Hz)

obo

Max

(F)

ICBO

Max

(A)

Y(BR)CBO

(V)

Max

(W)

Derate

(WrC)

Toper

Max

eC)

Package

Style

V(BR)CEO

TASSOl

400 V, (Cont'd)

See Index

800

50M

14p

lOu

800

600m

4.0m

175 A

TO-5

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ST3042

ST3043

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3N74

3N75

3N76

3N79

2N332

2N333

2N335

2N336

2N334

2SCl16

2N773

2N776

2Nl149

2S001

TCl17

2Nl17

TCl18A

2Nl18A

2N1155

2Nll54

2N774

2N777

2Nl150

SA2253

2SOO3

2N162

2N162A

TCl18

2Nl18

2N161

2N161A

2Nl096

2Nl151

PN1613

2Nl152

2S004

2N775

2N778

SemiconTeeh

SemieonTeeh

SemieonTech

See

Index

See Index

See

Index

See Index

l?eelndex

See

Index

See Index

Solid Stine

Hybrid Semi

seeln~ex

10m

20m

25m

200m

10m

100m

25m

50m

60m

100m

25m

1.0M

100M

40M

30M

4.0M

5.0M

6.0M

7.0M

8.0M

70M

lOp

7.0p

20p

3.5p

1.5p

7.0p

7.QJt

r·()p

7.0p

20p

1.5p

7.0p

l.Op

7.0p

25p

7.0p

1.5p

L5p

7.0p

1.2p

7.0p

1.6p

7.0p

1.2p

2.3p

7.0p

L6p

1.6p

25p

r·op

7.0p

3.0p

~~~~

~g~

~~:~

~~~~gA

~~gg~

~~~JJ~

See Index

CrimsonSemi

Spaee Power

Hybrid Semi

CrimsonSemi

See Index

TeledynCrys

See Index

l?eelndex

See Index

TeledynCrys

See Index

SemieonTeeh

uenrl

Di~e

SemieonTech

See Index

TeledynCrys

See Index

l?OUd :stine

See Index

FairehiidSC

CentralSemi

See Index

Space Power

HYbrid Semi

AF Gain

See Index

Hybrid Semi

NthAmerSemi

TeledynCrys

See Index

SemieonTech

Genrl Diode

See Index

see Index

See Index

Solid Stine

See Index

SemieonTeeh

Hybrid Semi

Genrl Diode

Miero Elees

FairehiidSC

CentralSemi

~IC! ~tlne

3.5

5.0

.01u

.()1U

.01u

.02u

2.0u

LOu

1.0u

1.0n

1.0

180m

50m

200m

300m

~gg~

300m

150m

750m

200m

65m

110m

150m

750m

80m

130m

150m

200m

150m

500m

150m

300m

150m

170m

750m

125m

150m

125m

150m

1!lum

125m

200m

150m

125m

300m

150m

100m

1.3m

2.0m

175S

175 S

175S

175 S

175S

TO-l04var

N/A

TO-72

g~~

175S

175 J

175J

175 J

1755

175 S

150

175S

175 J

175 S

175S

175 S

150

175 S

175 J

:m:~~

TO-72

TO-5

TO-18

TO-22var

TO-5

TO-18

TO-22var

!9-

22var

TO-22var

TO-18

TO-22var

TO-18

TO-22var

TO-78

12M

4.0M

2.0u

30n

2.0u

6.0u

5.0u

2.0u

.05u

30n

lOu

2.0u

lOu

~~~

::g~

8.0M

100M

1.0M

13M

4.0M

10M

8.0M

5.0M

3.0M

~g~

~~g~

5.0m

1.3m

1.2m

1.0m

769u

1.0m

5.9m

1.2m

1.0m

+g:~~

~~~~

g~j

175

+g:~

TO-5

TO-22

TO-18

TO-22var

N/A

769u

1.0m

8.3m

1.0m

3.3m

1.0m

769u

1.2m

1.0m

l.()m

1.0m

2.1m

1.0m

3.3m

1.0m

~~g~~g

2N337

BSY11

TCl19

2Nl19

2S014

2N163

100

~~~~~A

2SC56

2Nl153

2S005

2SOO5

PN1711

2SC858

2SC859

25m

1.0

25m

100m

20m

50m

25m

20m

25m

20m

25m

20m

1.0

~g~

14M

60M

15M

4.0M

2.0u

50n

2.0u

30n

~gg~

175

175 J

125 J

175 J

150

175

150

~~A5

>ig:~2var

TO-18

TO-22var

TO-l05

~gg~

20M

100M

6.0M

20M

6.0M

30M

180M

16M

60M

80M

1.UU

1.0u

2.0u

1.0u

LOu

lOu

lUU

1.0u

2.0u

1.0u

50n

2.0u

1.0u

LOu

+g:~

TO-5

TO-18

TO-22var

TO-5

TO-22var

TO-5

TO-106var

TO-22var

TO-5

TO-l05

TO-l06var

~~-~2Var

150 J

125 J

175J

150 J

150

125 J

125

125 J

~~~~g

=c:x~~~s

Advncd Semi

Semi Ine

Solid Stine

~gg

240

~~~

~:g~

180M

g~j

125 J

50m

+g:~~ar

739

2N1149 Related Products

	2N1149	2N1151	2N1150	2N336	2N338	2N1154	2N332
Description	Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, NPN, Silicon, TO-22VAR, 3 PIN	Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, NPN, Silicon, TO-22VAR, 3 PIN	Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, NPN, Silicon, TO-22VAR, 3 PIN	Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN	Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN	Small Signal Bipolar Transistor, 0.06A I(C), 1-Element, NPN, Silicon, TO-22VAR, 3 PIN	Small Signal Bipolar Transistor, 0.025A I(C), NPN, Silicon, TO-5, TO-5, 3 PIN
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Parts packaging code	TO-22	TO-22	TO-22	TO-5	TO-5	TO-22	TO-5
package instruction	CYLINDRICAL, R-XBCY-W3	CYLINDRICAL, R-XBCY-W3	CYLINDRICAL, R-XBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, R-XBCY-W3	CYLINDRICAL, O-MBCY-W3
Contacts	3	3	3	3	3	3	3
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant
Maximum collector current (IC)	0.025 A	0.025 A	0.025 A	0.025 A	0.02 A	0.06 A	0.025 A
Configuration	Single	Single	Single	Single	Single	Single	Single
JESD-30 code	R-XBCY-W3	R-XBCY-W3	R-XBCY-W3	O-MBCY-W3	O-MBCY-W3	R-XBCY-W3	O-MBCY-W3
JESD-609 code	e0	e0	e0	e0	e0	e0	e0
Number of terminals	3	3	3	3	3	3	3
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	150 °C	150 °C	175 °C
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	METAL	METAL	UNSPECIFIED	METAL
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	ROUND	ROUND	RECTANGULAR	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.15 W	0.15 W	0.15 W	0.15 W	0.125 W	0.75 W	0.15 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	12 MHz	14 MHz	13 MHz	7 MHz	30 MHz	1 MHz	4 MHz
Base Number Matches	1	1	1	1	1	1	1
Minimum DC current gain (hFE)	13	39	24	76	80	19	-
Number of components	1	1	1	1	1	1	-

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