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BZT52C30SR9G

Description
Zener Diode,
CategoryDiscrete semiconductor    diode   
File Size353KB,7 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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BZT52C30SR9G Overview

Zener Diode,

BZT52C30SR9G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Objectid8054161195
Reach Compliance Codecompliant
Country Of OriginMainland China
ECCN codeEAR99
YTEOL7.1
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance80 Ω
JESD-30 codeR-PDSO-F2
JESD-609 codee3
Maximum knee impedance282 Ω
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
polarityUNIDIRECTIONAL
Maximum power dissipation0.2 W
Nominal reference voltage30 V
Maximum reverse current0.045 µA
Reverse test voltage21 V
surface mountYES
technologyZENER
Terminal surfaceMATTE TIN OVER NICKEL
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature30
Maximum voltage tolerance5%
Working test current2 mA
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