DB102S-C datasheet, PDF - EEWORLD Datasheet

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DB102S-C: DescriptionBridge Rectifier Diode, 1 Phase, 1A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, DB-S, 4 PIN; CategoryDiscrete semiconductor diode; File Size29KB，3 Pages; ManufacturerRectron Semiconductor; Websitehttp://www.rectron.com/; Environmental Compliance

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DB102S-C Overview

Bridge Rectifier Diode, 1 Phase, 1A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, DB-S, 4 PIN

DB102S-C Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Rectron Semiconductor
package instruction	R-PDSO-G4
Contacts	4
Reach Compliance Code	not_compliant
ECCN code	EAR99
Other features	UL RECOGNIZED
Minimum breakdown voltage	100 V
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
JESD-30 code	R-PDSO-G4
JESD-609 code	e3
Maximum non-repetitive peak forward current	30 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	1 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	265
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	100 V
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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RECTRON

SEMICONDUCTOR

TECHNICAL SPECIFICATION

DB101S

THRU

DB1012S

SINGLE-PHASE GLASS PASSIVATED

SILICON BRIDGE RECTIFIER

VOLTAGE RANGE 50 to 1200 Volts CURRENT 1.0 Ampere

FEATURES

*

Surge overload rating - 50 amperes peak

Ideal for printed circuit board

Reliable low cost construction utilizing molded

Glass passivated device

Polarity symbols molded on body

Mounting position: Any

Weight: 1.0 gram

DB-S

.310 (7.9)

.290 (7.4)

.255 (6.5)

.245 (6.2)

MECHANICAL DATA

* Epoxy : Device has UL flammability classification 94V-0

* UL listed the recognized component directory, file #E94233

.042 (1.1)

.038 (1.0)

.013 (.330)

.003 (.076)

.410 (10.4)

.360 (9.4)

.009

(0.229)

.060 (1.524)

.040 (1.016)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

o

C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

.346 (8.8)

.307 (7.8)

.135 (3.4)

.115 (2.9)

.205 (5.2)

.195 (5.0)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS

(At T

A

= 25

o

C unless otherwise noted)

RATINGS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Bridge Input Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Output Current at T

A

= 40 C

Peak Forward Surge Current 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

Typical Thermal Resistance

(Note 1)

Operating and Storage Temperature Range

I

FSM

R

θ

JA

R

θ

JC

T

J,

T

STG

50

40

9

-55 to + 150

0

o

SYMBOL

V

RRM

V

RMS

V

DC

I

O

DB101S DB102S DB103S DB104S DB105S DB106S DB107S DB1012S UNITS

50

35

50

100

70

100

200

140

200

400

280

400

1.0

600

420

600

800

560

800

1000

700

1000

1200

840

1200

Volts

Amps

0

C/ W

C

ELECTRICAL CHARACTERISTICS

(At T

A

= 25

o

C unless otherwise noted)

SYMBOL

CHARACTERISTICS

Maximum Forward Voltage Drop per Bridge

Element at 1.0A DC

Maximum Reverse Current at rated

DC Blocking Voltage per element

@T

A

= 25

o

C

@T

A

= 125 C

o

DB101S DB102S DB103S DB104S DB105S DB106S DB107S DB1012S UNITS

1.1

5.0

Volts

uAmps

mAmps

2005-2

V

F

I

R

0.5

NOTE: 1.Suffix “-s” Surface Mount for Dip Bridge.

2.Units mounted on P.C.B.with 0.5x0.5” (13x13mm) copper pads.

3. “Fully ROHS compliant”, “100% Sn plating (Pb-free)”.

DB102S-C Related Products

	DB102S-C	DB105S-C	DB106S-C	DB104S-C	DB105S-T	DB107S-C
Description	Bridge Rectifier Diode, 1 Phase, 1A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, DB-S, 4 PIN	Bridge Rectifier Diode, 1 Phase, 1A, 600V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, DB-S, 4 PIN	Bridge Rectifier Diode, 1 Phase, 1A, 800V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, DB-S, 4 PIN	Bridge Rectifier Diode, 1 Phase, 1A, 400V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, DB-S, 4 PIN	Bridge Rectifier Diode, 1 Phase, 1A, 600V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, DB-S, 4 PIN	Bridge Rectifier Diode, 1 Phase, 1A, 1000V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, DB-S, 4 PIN
Is it lead-free?	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
package instruction	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
Contacts	4	4	4	4	4	4
Reach Compliance Code	not_compliant	compliant	not_compliant	not_compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED
Minimum breakdown voltage	100 V	600 V	800 V	400 V	600 V	1000 V
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
JESD-30 code	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
JESD-609 code	e3	e3	e3	e3	e3	e3
Maximum non-repetitive peak forward current	30 A	30 A	30 A	30 A	30 A	30 A
Number of components	4	4	4	4	4	4
Phase	1	1	1	1	1	1
Number of terminals	4	4	4	4	4	4
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
Maximum output current	1 A	1 A	1 A	1 A	1 A	1 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	265	265	265	265	265	265
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	100 V	600 V	800 V	400 V	600 V	1000 V
surface mount	YES	YES	YES	YES	YES	YES
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maker	Rectron Semiconductor	-	Rectron Semiconductor	Rectron Semiconductor	Rectron Semiconductor	Rectron Semiconductor
Base Number Matches	1	1	1	1	1	-

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