BFQ19SE6327 datasheet, PDF - EEWORLD Datasheet

BFQ19SE6327: DescriptionRF Small Signal Bipolar Transistor, 0.075A I(C), 1-Element, L Band, Silicon, NPN; CategoryDiscrete semiconductor The transistor; File Size86KB，4 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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BFQ19SE6327 Overview

RF Small Signal Bipolar Transistor, 0.075A I(C), 1-Element, L Band, Silicon, NPN

Parameter Name	Attribute value
Maker	SIEMENS
package instruction	SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	0.075 A
Collector-based maximum capacity	1.5 pF
Collector-emitter maximum voltage	15 V
Configuration	SINGLE
highest frequency band	L BAND
JESD-30 code	R-PSSO-F3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	SINGLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	5500 MHz
Base Number Matches	1

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