Power Bipolar Transistor, 6A I(C), 65V V(BR)CEO, PNP, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Objectid | 1869056974 |
| package instruction | TO-66, 2 PIN |
| Reach Compliance Code | unknown |
| Maximum collector current (IC) | 6 A |
| Collector-emitter maximum voltage | 65 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 20 |
| JEDEC-95 code | TO-66 |
| JESD-30 code | O-MBFM-P2 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 200 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | FLANGE MOUNT |
| Polarity/channel type | PNP |
| Maximum power dissipation(Abs) | 40 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | TIN LEAD |
| Terminal form | PIN/PEG |
| Terminal location | BOTTOM |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 5 MHz |
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