CAT22C10WA-30TE13 datasheet, PDF

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CAT22C10WA-30TE13: DescriptionNon-Volatile SRAM, 64X4, 300ns, CMOS, PDSO16, LEAD AND HALOGEN FREE, SOIC-16; Categorystorage storage; File Size69KB，10 Pages; ManufacturerCatalyst; Websitehttp://www.catalyst-semiconductor.com/; Environmental Compliance

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CAT22C10WA-30TE13 Overview

Non-Volatile SRAM, 64X4, 300ns, CMOS, PDSO16, LEAD AND HALOGEN FREE, SOIC-16

CAT22C10WA-30TE13 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Parts packaging code	SOIC
package instruction	SOP, SOP16,.4
Contacts	16
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	300 ns
JESD-30 code	R-PDSO-G16
JESD-609 code	e3
length	10.3 mm
memory density	256 bit
Memory IC Type	NON-VOLATILE SRAM
memory width	4
Humidity sensitivity level	1
Number of functions	1
Number of terminals	16
word count	64 words
character code	64
Operating mode	ASYNCHRONOUS
Maximum operating temperature	105 °C
Minimum operating temperature	-40 °C
organize	64X4
Package body material	PLASTIC/EPOXY
encapsulated code	SOP
Encapsulate equivalent code	SOP16,.4
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
power supply	5 V
Certification status	Not Qualified
Maximum seat height	2.65 mm
Maximum standby current	0.00003 A
Maximum slew rate	0.04 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	40
width	7.5 mm
Base Number Matches	1

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CAT22C10

256-Bit Nonvolatile CMOS Static RAM

FEATURES

Single 5V Supply

Fast RAM Access Times:

GEN

ALO

Low CMOS Power Consumption:

–200ns

–300ns

Infinite EEPROM to RAM Recall

CMOS and TTL Compatible I/O

Power Up/Down Protection

100,000 Program/Erase Cycles (E

PROM)

–Active: 40mA Max.

–Standby: 30

A Max.

JEDEC Standard Pinouts:

–18-pin DIP

–16-pin SOIC

10 Year Data Retention

Commercial, Industrial and Automotive

Temperature Ranges

"Green" Package Options Available

DESCRIPTION

The CAT22C10 NVRAM is a 256-bit nonvolatile memory

organized as 64 words x 4 bits. The high speed Static

RAM array is bit for bit backed up by a nonvolatile

EEPROM array which allows for easy transfer of data

from RAM array to EEPROM (STORE) and from

EEPROM to RAM (RECALL). STORE operations are

completed in 10ms max. and RECALL operations typi-

cally within 1.5µs. The CAT22C10 features unlimited

RAM write operations either through external RAM

writes or internal recalls from EEPROM. Internal false

store protection circuitry prohibits STORE operations

when V

is less than 3.0V.

The CAT22C10 is manufactured using Catalyst’s ad-

vanced CMOS floating gate technology. It is designed

to endure 100,000 program/erase cycles (EEPROM)

and has a data retention of 10 years. The device is

available in JEDEC approved 18-pin plastic DIP and 16-

pin SOIC packages.

PIN CONFIGURATION

DIP Package (P, L)

SOIC Package (J, W)

Vss

STORE

PIN FUNCTIONS

Pin Name

–A

Function

Address

Data In/Out

Write Enable

Chip Select

Recall

Store

+5V

Ground

No Connect

Vss

STORE

Vcc

I/O3

I/O2

I/O1

I/O0

RECALL

Vcc

I/O4

I/O3

I/O2

I/O1

RECALL

I/O

–I/O

RECALL

STORE

Characteristics subject to change without notice

Doc. No. 1082, Rev. O

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