DPS256S8BN-55B datasheet, PDF - EEWORLD Datasheet

DPS256S8BN-55B: DescriptionSRAM Module, 256KX8, 55ns, CMOS, CDMA32, SIDE BRAZED, CERAMIC PACKAGE-32; Categorystorage storage; File Size131KB，6 Pages; ManufacturerTwilight Technology Inc.

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DPS256S8BN-55B Overview

SRAM Module, 256KX8, 55ns, CMOS, CDMA32, SIDE BRAZED, CERAMIC PACKAGE-32

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Twilight Technology Inc.
Parts packaging code	MODULE
package instruction	DIP, DIP32,.6
Contacts	32
Reach Compliance Code	unknown
ECCN code	3A001.A.2.C
Maximum access time	55 ns
I/O type	COMMON
JESD-30 code	R-CDMA-T32
memory density	2097152 bit
Memory IC Type	SRAM MODULE
memory width	8
Number of functions	1
Number of terminals	32
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	256KX8
Output characteristics	3-STATE
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Encapsulate equivalent code	DIP32,.6
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Filter level	38535Q/M;38534H;883B
Maximum standby current	0.0036 A
Minimum standby current	2 V
Maximum slew rate	0.185 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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