TA76L431FB
TOSHIBA Bipolar Linear Integrated Circuit
Silicon Monolithic
TA76L431FB
2.495 V Adjustable High-Precision Shunt Regulators
These devices are adjustable high-precision shunt regulators
whose output voltage (V
KA
) can be set arbitrarily using two
external resistors.
The devices have a precise internal reference voltage of 2.495 V,
enabling them to operate at low voltage. In addition, they can be
used as zener diodes to perform temperature compensation.
Features
•
•
•
•
Precision reference voltage
: V
REF
=
2.495 V
±
1.0% (Tj
=
25°C)
Adjustable output voltage: V
REF
≤
V
OUT
≤
19 V
Minimum cathode current for regulation: I
Kmin
=
0.5 mA (max)
Packages: Surface-mount S-Mini
SOP3-P-0302-0.95
Weight: 0.012 g (typ.)
Pin Assignment/Marking
3
1: Cathode (K)
2: Reference (REF)
3: Anode (A)
1F
1
2
How to Order
Product No.
TA76L431FB(TE85L,F)
Package
S-Mini(surface-mount type)
Packing Type and Capacity
Embossed tape: 3000 pcs / reel
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2012-01-22
TA76L431FB
Functional Block Diagram
Cathode (K)
Cathode (K)
Reference (REF)
Reference (REF)
Circuit Symbol
2.495 V
Anode (A)
Anode (A)
Typical Application Circuits
(1) 2.495 V Reference (V
KA
=
V
REF
)
(2) Shunt Regulator (V
KA
>
V
REF
)
V
IN
V
IN
V
OUT
=
2.495 V
R2
R1
I
REF
V
REF
V
OUT
⎛
R
1
⎞
⎟ +
I
REF
•
R
1
V
OUT
=
V
REF
⎜
1
+
⎜
R
2
⎟
⎝
⎠
Usage Precautions
1. TA76L431FB
These products contain MOS elements. Please take care to avoid generating static electricity when handling
these devices.
2. TA76L431FB
The oscillation frequency of these devices is determined by the value of the capacitor connected between the
anode and the cathode.
When establishing maximum operating condition parameters, please derate the absolute maximum rating
values specified in these datasheets so as to allow an operational safety margin.
Use of a laminated ceramic capacitor is recommended
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2012-01-22
TA76L431FB
Absolute Maximum Ratings (Ta
=
25°C)
Characteristics
Cathode voltage
Cathode current
Cathode-anode reverse current
Reference voltage
Reference current
Reference-anode reverse current
Power dissipation
Thermal resistance
Operating junction temperature
Junction temperature
Storage temperature
Symbol
V
KA
I
K
−I
K
V
REF
I
REF
−I
REF
P
D
R
th
T
jopr
T
j
T
stg
Rating
20
50
50
7
50
10
200 (Note 1)
625 (Note 1)
−40
to 150
150
−55
to 150
Unit
V
mA
mA
V
μA
mA
mW
°C/W
°C
°C
°C
Note 1: Glass epoxy substrate mounting: 30 mm
×
30 mm
×
0.8 mm (t) (Cu pad area 35 mm
2
)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Operating Ranges
Characteristics
Cathode voltage
Cathode current
Symbol
V
KA
I
K
Min
V
REF
0.5
Typ.
⎯
⎯
Max
19
40
Unit
V
mA
Electrical Characteristics (Unless otherwise specified, Tj
=
25°C, IK
=
10 mA)
Characteristics
Reference voltage
Deviation of reference input voltage
over temperature
Ratio of change in reference input
voltage to the change in cathode
voltage
Reference input current
Deviation of reference input current
over temperature
Minimum cathode current for
regulation
Off-State cathode current
Dynamic impedance
Symbol
V
REF
V
REF (dev)
ΔV
REF
/ΔV
I
REF
I
REF (dev)
I
Kmin
I
Koff
⎪Z
KA
⎪
V
KA
=
V
REF
0°C
≤
Tj
≤
70°C, V
KA
=
V
REF
V
REF
≤
V
KA
≤
10 V
10 V
≤
V
KA
≤
19 V
V
KA
=
V
REF
0°C
≤
Tj
≤
70°C, V
KA
=
V
REF
,
R
1
=
10 kΩ, R
2
= ∞
V
KA
=
V
REF
V
KA
=
19 V, V
REF
=
0 V
V
KA
=
V
REF
, f
≤
1 kHz,
0.5 mA
≤
I
K
≤
40 mA
Test Condition
Min
2.470
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
2.495
8
0.8
0.8
0.6
0.3
0.2
⎯
0.2
Max
2.520
18
2.4
2.0
3
1.2
0.5
1.0
0.5
Unit
V
mV
mV/V
μA
μA
mA
μA
Ω
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2012-01-22
TA76L431FB
Note on Electrical Characteristics
Tj
=
25°C in the measurement conditions of each item is a regulation for where a pulse test is carried out and any
drift in the electrical characteristic due to a rise in the junction temperature of the chip may be disregarded.
The deviation parameters V
REF (dev)
and I
REF (dev)
are defined as the maximum variation of the V
REF
and I
REF
over the rated temperature range (Tj
=
0 to 70°C).
The average temperature coefficient of the V
REF
is defined as:
V
REF
Max
V
REF (dev)
Min
α
V
REF
ΔTj
⎛
V
REF (dev)
×
10
6
⎜
⎜
V
REF
@25
°
C
⎝
=
Δ
Tj
⎞
⎟
⎟
⎠
(
ppm
°
C
)
Application Circuit Example
Error amplification circuit for switching power supply
V
OUT
Photo-
coupler
GND
Shunt regulator
This circuit amplifies the difference between the switching power supply’s secondary output voltage and the
shunt regulator’s reference voltage. It then feeds the amplified voltage back to the primary input voltage via the
photocoupler.
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2012-01-22
TA76L431FB
P
Dmax
– Ta
0.6
50
TA76L431FB
Input
VKA
IK
VKA
=
VREF
10
I
K
– V
KA
(W)
Allowable power dissipation P
Dmax
0.5
0.4
0.3
Single
Cathode current
I
K
(mA)
30
−10
85°C
−30
0.2
0.1
25°C
Tj
= −40°C
0
0
20
40
60
80
100
120
140
160
−50
−1
0
1
2
3
Ambient temperature
Ta
(°C)
Cathode voltage
V
KA
(V)
I
K
– V
KA
600
Input
IK
VKA
2.53
V
REF
– Tj
VKA
=
VREF
VKA
Input
VREF
IK
400
VKA
=
VREF
Reference voltage V
REF
(V)
IK
=
10 mA
2.51
Cathode current
I
K
(μA)
200
IK min
85°C
2.49
0
85°C
25°C
Tj
= −40°C
−200
−1
0
1
2
25°C
Tj
= −40°C
2.47
3
2.45
−50
0
50
100
150
Cathode voltage
V
KA
(V)
Junction temperature Tj
(°C)
ΔV
REF
– V
KA
2.53
0
Change in reference voltage
ΔV
REF
(mV)
VKA
=
VREF
IK
=
10 mA
−10
2.51
−20
2.49
−30
VREF
R1
Input
VKA
IK
VKA
Inpu
VREF
IK
2.47
−40
R2
IK
=
10 mA
Tj
=
25°C
−50
2.45
0
−50
5
0
10
50 15
20
100
25
Cathode voltage
V
KA
(V)
5
2012-01-22
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