PD-94063C
SCHOTTKY RECTIFIER
HIGH EFFICIENCY SERIES
30LJQ150
JANS1N7038U3
JANTX1N7038U3
JANTXV1N7038U3
30Amp, 150V
Ref: MIL-PRF-19500/731
Major Ratings and Characteristics
Characteristics
I
F(AV)
V
RRM
I
FSM
@ tp = 8.3ms half-sine
V
F
@ 30Apk, T
J
=125°C
1N7038U3
30
150
140
0.92
Units
A
V
A
V
°C
Description/Features
The 1N7038U3 Schottky rectifier has been expressly
designed to meet the rigorous requirements of high
reliability environments. It is packaged in the hermetic
surface mount SMD-0.5 ceramic package. The device's
forward voltage drop and reverse leakage current are
optimized for the lowest power loss and the highest circuit
efficiency for typical high frequency switching power
supplies and resonant power converters. Full MIL-PRF-
19500 quality conformance testing is available on source
control drawings to TX, TXV and S quality levels.
Hermetically Sealed
Low Forward Voltage Drop
High Frequency Operation
Guard Ring for Enhanced Ruggedness and Long term
Reliability
• Surface Mount
• Lightweight
• ESD Rating: Class 1B per MIL-STD-750, Method 1020
•
•
•
•
T
J
,T
stg
Operating and storage
-65 to 150
CASE STYLE
( ISOLATED BASE )
CATHODE ANODE ANODE
Case Outline and Dimensions - SMD-0.5
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10/03/12
30LJQ150, 1N7038U3
Voltage Ratings
Part number
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
1N7038U3
150
Absolute Maximum Ratings
Parameters
I
F(AV)
Max. Average Forward Current
See Fig. 5
I
FSM
Max. Peak One Cycle Non - Repetitive
Surge Current
140
A
@ t
p
= 8.3ms half-sine
Limits
30
Units
A
Conditions
50% duty cycle @ T
C
= 83°C, square waveform
Electrical Specifications
Parameters
V
FM
Max. Forward Voltage Drop
See Fig. 1
Limits
1.07
1.26
0.96
1.18
0.75
0.92
Units
V
V
V
V
V
V
mA
mA
pF
nH
@15A
@30A
@15A
@30A
@15A
@30A
T
J
= 25°C
T
J
= 125°C
Conditions
T
J
= -55°C
T
J
= 25°C
T
J
= 125°C
V
R
= rated V
R
I
RM
C
T
L
S
Max. Reverse Leakage Current
See Fig. 2
Max. Junction Capacitance
Typical Series Inductance
0.12
6.0
340
4.8
V
R
= 5V
DC
(1MHz, 25°C)
Measured from center of cathode pad to center of
anode pad
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max.Junction Temperature Range
Max. Storage Temperature Range
to Case
wt
Weight (Typical)
Die Size (Typical)
Case Style
Pulse Width < 300µs, Duty Cycle < 2%
Pins 2 and 3 externally tied together
1.0
125X125
SMD-0.5
g
mils
Limits Units
-65 to 150
-65 to 150
1.82
°C
°C
°C/W
DC operation
Conditions
R
thJC
Max. Thermal Resistance, Junction
See Fig. 4
2
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30LJQ150, 1N7038U3
10
125°C
100
Reverse Current - I R ( mA )
1
100°C
75°C
0.1
0.01
25°C
0.001
Instantaneous Forward Current - I F (A)
0.0001
0
20
40
60
80
100
120
140
160
Reverse Voltage - V R (V)
10
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
Tj = 125°C
Junction Capacitance - CT (pF)
1000
Tj = 25°C
T J = 25°C
100
Tj = -55°C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Forward Voltage Drop - V F (V)
10
0
20
40
60
80
100
120
140
160
Fig. 1 - Max. Forward Voltage Drop Characteristics
Reverse Voltage -V R (V)
Fig. 3 - Typical Junction Capacitance Vs.
Reverse Voltage
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30LJQ150, 1N7038U3
10
Thermal Response (Z thJC)
D = 0.5
D = 0.4
1
D = 0.3
D = 0.2
D = 0.1
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.1
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
160
Allowable Case Temperature - (°C)
140
120
100
80
60
40
20
0
0
5
10
DC
R
thJC (DC) = 1.82°C/W
80 % Square Wave (D=0.50)
Rated VR applied
15
20
25
30
35
Average Forward Current - I F (AV) (A)
Fig. 5 - Max. Allowable Case Temperature Vs.
Average Forward Current
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Data and specifications subject to change without notice. 10/2012
4
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