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CBR35-020P

Description
SILICON BRIDGE RECTIFIER
CategoryDiscrete semiconductor    diode   
File Size765KB,7 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric View All

CBR35-020P Overview

SILICON BRIDGE RECTIFIER

CBR35-020P Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerCentral Semiconductor
package instructionPLASTIC, CASE FP, 4 PIN
Contacts4
Manufacturer packaging codeCASE FP
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresUL RECOGNIZED
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JESD-30 codeS-PUFM-D4
JESD-609 codee0
Maximum non-repetitive peak forward current400 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current35 A
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formSOLDER LUG
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
CBR35-010P SERIES
w w w. c e n t r a l s e m i . c o m
SILICON BRIDGE RECTIFIERS
35 AMP, 100 THRU 1000 VOLT
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBR35-010P series
devices are silicon, single phase, full wave bridge rectifiers
designed for general purpose applications. The molded
epoxy case has a built-in metal baseplate for heat sink
mounting. The device utilizes standard 0.25” FASTON
terminals.
MARKING: FULL PART NUMBER
CASE FP
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL -010P -020P
Peak Repetitive Reverse Voltage
VRRM
100
200
DC Blocking Voltage
VR
100
200
RMS Reverse Voltage
Average Forward Current (TC=60°C)
Peak Forward Surge Current
I
2
t Rating for Fusing (1ms<t<8.3ms)
RMS Isolation Voltage (case to lead)
Operating and Storage
Junction Temperature
Thermal Resistance
ELECTRICAL
SYMBOL
IR
IR
VF
CJ
VR(RMS)
IO
IFSM
I
2
t
Viso
TJ, Tstg
Θ
JC
70
140
CBR35
-040P -060P
400
600
400
280
35
400
660
2500
-65 to +150
1.4
600
420
-080P
800
800
560
-100P
1000
1000
700
UNITS
V
V
V
A
A
A
2
s
Vac
°C
°C/W
CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
TEST CONDITIONS
TYP
MAX
VR=Rated VRRM
10
VR=Rated VRRM, TA=125°C
500
IF=17.5A
VR=4.0V, f=1.0MHz
1.2
300
UNITS
μA
μA
V
pF
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