DIODE 15 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-35, Variable Capacitance Diode
| Parameter Name | Attribute value |
| package instruction | O-LALF-W2 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Minimum breakdown voltage | 15 V |
| Shell connection | ISOLATED |
| Configuration | SINGLE |
| Minimum diode capacitance ratio | 1.3 |
| Diode component materials | SILICON |
| Diode type | VARIABLE CAPACITANCE DIODE |
| JEDEC-95 code | DO-35 |
| JESD-30 code | O-LALF-W2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 150 °C |
| Package body material | GLASS |
| Package shape | ROUND |
| Package form | LONG FORM |
| Certification status | Not Qualified |
| Maximum reverse current | 0.05 µA |
| Reverse test voltage | 15 V |
| surface mount | NO |
| Terminal form | WIRE |
| Terminal location | AXIAL |
| Base Number Matches | 1 |
| BB119136 | BB119143 | BB119113 | BB119133 | BB119153 | BB119116 | |
|---|---|---|---|---|---|---|
| Description | DIODE 15 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-35, Variable Capacitance Diode | DIODE 15 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-35, Variable Capacitance Diode | DIODE 15 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-35, Variable Capacitance Diode | DIODE 15 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-35, Variable Capacitance Diode | DIODE 15 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-35, Variable Capacitance Diode | DIODE 15 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-35, Variable Capacitance Diode |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknow |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Minimum breakdown voltage | 15 V | 15 V | 15 V | 15 V | 15 V | 15 V |
| Shell connection | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum diode capacitance ratio | 1.3 | 1.3 | 1.3 | 1.3 | 1.3 | 1.3 |
| Diode component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Diode type | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE |
| JEDEC-95 code | DO-35 | DO-35 | DO-35 | DO-35 | DO-35 | DO-35 |
| JESD-30 code | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 2 | 2 | 2 | 2 | 2 | 2 |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| Package body material | GLASS | GLASS | GLASS | GLASS | GLASS | GLASS |
| Package shape | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
| Package form | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Maximum reverse current | 0.05 µA | 0.05 µA | 0.05 µA | 0.05 µA | 0.05 µA | 0.05 µA |
| Reverse test voltage | 15 V | 15 V | 15 V | 15 V | 15 V | 15 V |
| surface mount | NO | NO | NO | NO | NO | NO |
| Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
| Terminal location | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL |
| package instruction | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | - | - |
| Base Number Matches | 1 | 1 | 1 | 1 | - | - |
| Maker | - | NXP | NXP | - | NXP | NXP |