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CMPT4401NPN

Description
COMPLEMENTARY SILICON TRANSISTORS
File Size98KB,2 Pages
ManufacturerCentral Semiconductor
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CMPT4401NPN Overview

COMPLEMENTARY SILICON TRANSISTORS

CMPT4401 NPN
CMPT4403 PNP
COMPLEMENTARY
SILICON TRANSISTORS
Central
TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT4401,
CMPT4403 types are complementary silicon
transistors manufactured by the epitaxial planar
process, epoxy molded in a surface mount
package, designed for small signal general
purpose amplifier and switching applications.
MARKING CODES:
CMPT4401: C2X
CMPT4403: C2T
SOT-23 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ,Tstg
Θ
JA
CMPT4401
60
40
6.0
600
350
-65 to +150
357
CMPT4403
40
40
5.0
UNITS
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
CMPT4401
SYMBOL TEST CONDITIONS
MIN
MAX
ICEV
IBEV
BVCBO
BVCEO
BVEBO
VCE=35V, VEB=0.4V
VCE=35V, VEB=0.4V
IC=100µA
IC=1.0mA
60
40
6.0
0.40
0.75
0.75
20
40
80
0.95
1.2
0.1
0.1
CMPT4403
MIN
MAX
0.1
0.1
40
40
5.0
0.40
0.75
0.75
30
60
100
0.95
1.3
UNITS
µA
µA
V
V
V
V
V
V
V
IE=100µA
VCE(SAT) IC=150mA, IB=15mA
VCE(SAT) IC=500mA, IB=50mA
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
IC=150mA,
IC=500mA,
IB=15mA
IB=50mA
VCE=1.0V, IC=0.1mA
VCE=1.0V, IC=1.0mA
VCE=1.0V, IC=10mA
R4 (26-September 2002)

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