IRFH7914PbF
Applications
l
l
HEXFET
®
Power MOSFET
Control MOSFET of Sync-Buck Converters
used for Notebook Processor Power
Control MOSFET for Isolated DC-DC
Converters in Networking Systems
V
DSS
30V
R
DS(on)
max
Qg
8.7m
Ω
@V
GS
= 10V 8.3nC
Benefits
l
l
l
l
l
l
l
l
Very low R
DS(ON)
at 4.5V V
GS
Low Gate Charge
Fully Characterized Avalanche Voltage and
Current
100% Tested for R
G
Lead-Free (Qualified up to 260°C Reflow)
RoHS compliant (Halogen Free)
Low Thermal Resistance
Large Source Lead for more reliable Soldering
PQFN 5X6 mm
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
30
± 20
15
12
35
110
3.1
Units
V
g
Power Dissipation
g
Power Dissipation
c
A
W
W/°C
°C
Linear Derating Factor
Operating Junction and
g
2.0
0.025
-55 to + 150
Storage Temperature Range
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-Case
f
Typ.
–––
–––
Max.
7.2
40
Units
°C/W
Junction-to-Ambient
g
Notes
through
are on page 9
1
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© 2013 International Rectifier
August 16, 2013
IRFH7914PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
77
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.022
7.5
11.2
1.8
-6.08
–––
–––
–––
–––
–––
8.3
2.1
1.0
2.8
2.4
3.8
4.8
1.3
11
11
12
4.6
1160
220
100
–––
–––
8.7
13
2.35
–––
1.0
150
100
-100
–––
12
–––
–––
–––
–––
–––
–––
2.2
–––
–––
–––
–––
–––
–––
–––
pF
nC
Ω
nC
V
DS
= 15V
V
GS
= 4.5V
I
D
= 11A
V
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 14A
V
GS
= 4.5V, I
D
V/°C Reference to 25°C, I
D
= 1mA
mΩ
V
mV/°C
µA
nA
S
e
= 11A
e
V
DS
= V
GS
, I
D
= 25µA
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 11A
See Fig.17 & 18
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
ns
I
D
= 11A
R
G
=1.8Ω
See Fig.15
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
Avalanche Characteristics
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
d
Typ.
–––
–––
Max.
17
11
Units
mJ
A
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
14
9.5
3.9
A
110
1.0
21
14
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= 11A, V
GS
= 0V
T
J
= 25°C, I
F
= 11A, V
DD
= 15V
di/dt = 200A/µs
e
eÃ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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© 2013 International Rectifier
August 16, 2013
IRFH7914PbF
1000
1000
≤
60µs PULSE WIDTH
Tj = 25°C
ID, Drain-to-Source Current (A)
TOP
100
BOTTOM
ID, Drain-to-Source Current (A)
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
≤
60µs PULSE WIDTH
Tj = 150°C
100
TOP
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
10
10
1
2.3V
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
1
2.3V
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
RDS(on) , Drain-to-Source On Resistance
ID, Drain-to-Source Current (A)
ID = 14A
VGS = 10V
100
1.5
(Normalized)
10
TJ = 150°C
T J = 25°C
1.0
1
VDS = 15V
≤
60µs PULSE WIDTH
0.1
1
2
3
4
5
6
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs. Temperature
August 16, 2013
3
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© 2013 International Rectifier
IRFH7914PbF
10000
14.0
ID= 11A
VGS , Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
12.0
10.0
8.0
6.0
4.0
2.0
0.0
VDS= 24V
VDS= 15V
C, Capacitance (pF)
1000
Ciss
Coss = Cds + Cgd
Coss
Crss
100
10
1
10
VDS, Drain-to-Source Voltage (V)
100
0
2
4
6
8
10 12 14 16 18 20 22
Q G , Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
T J = 150°C
10
T J = 25°C
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-to-Drain Voltage (V)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100µsec
1msec
10
DC
10msec
1
T A = 25°C
Tj = 150°C
Single Pulse
0.1
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
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© 2013 International Rectifier
Fig 8.
Maximum Safe Operating Area
August 16, 2013
IRFH7914PbF
16
VGS(th) , Gate Threshold Voltage (V)
2.5
14
12
ID, Drain Current (A)
2.0
10
8
6
4
2
0
25
50
75
100
125
150
T A , Ambient Temperature (°C)
1.5
ID = 25µA
1.0
0.5
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Ambient Temperature
Fig 10.
Threshold Voltage vs. Temperature
100
Thermal Response ( Z thJA ) °C/W
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
τ
J
τ
J
τ
1
τ
1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
A
τ
2
τ
3
τ
4
τ
4
τ
A
Ri (°C/W)
2.0021
6.0077
15.5002
16.4970
τi
(sec)
0.000245
0.014521
0.7719
38.3
Ci=
τi/Ri
Ci=
τi/Ri
0.1
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
10
100
1000
0.01
1E-006
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
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© 2013 International Rectifier
August 16, 2013
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