BGM1014
MMIC wideband amplifier
Rev. 2 — 19 September 2011
Product data sheet
1. Product profile
1.1 General description
Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal
matching circuit in a 6-pin SOT363 SMD plastic package.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Internally matched to 50
Good output match to 75
32 dB to 34 dB positive sloped gain for Low Noise Block (LNB) application
12.9 dBm saturated load power at 1 GHz
40 dB isolation
1.3 Applications
LNB Intermediate Frequency (IF) amplifiers
Cable systems
General purpose
1.4 Quick reference data
Table 1.
Symbol
V
S
I
S
s
21
2
NF
P
L(sat)
Quick reference data
Parameter
DC supply voltage
DC supply current
insertion power gain
noise figure
saturated load power
f = 1 GHz
f = 1 GHz
f = 1 GHz
Conditions
RF input; AC coupled
Min
-
17
31.5
-
12.5
Typ
5
21.0
32.3
4.2
12.9
Max
6
25
33.0
4.3
-
Unit
V
mA
dB
dB
dBm
NXP Semiconductors
BGM1014
MMIC wideband amplifier
2. Pinning information
Table 2.
Pin
1
2, 5
3
4
6
Pinning
Description
V
S
GND2
RF_OUT
GND1
RF_IN
1
2
3
6
4
2, 5
sym062
Simplified outline
6
5
4
Symbol
1
3
3. Ordering information
Table 3.
Ordering information
Package
Name
BGM1014
SC-88
Description
plastic surface mounted package; 6 leads
Version
SOT363
Type number
4. Marking
Table 4.
BGM1014
Marking
Marking code
C5-
Type number
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
S
I
S
P
tot
T
stg
T
j
P
D
Parameter
DC supply voltage
supply current
total power dissipation
storage temperature
junction temperature
maximum drive power
T
sp
90
C
Conditions
RF input; AC coupled
Min
-
-
-
65
-
-
Max
6
30
200
+150
150
10
Unit
V
mA
mW
C
C
dBm
6. Recommended operating conditions
Table 6.
Symbol
V
S
T
amb
Operating conditions
Parameter
DC supply voltage
ambient temperature
Conditions
Min
4.5
40
Typ
5.0
+25
Max
5.5
+85
Unit
V
C
BGM1014
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 19 September 2011
2 of 14
NXP Semiconductors
BGM1014
MMIC wideband amplifier
7. Thermal characteristics
Table 7.
Symbol
R
th(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction to solder point
Conditions
P
tot
= 200 mW; T
sp
90
C
Typ
300
Unit
K/W
8. Characteristics
Table 8.
Characteristics
V
S
= 5 V; I
S
= 21.1 mA; T
j
= 25
C; measured on demo board; unless otherwise specified.
Symbol Parameter
V
S
I
S
s
21
2
DC supply voltage
supply current
insertion power gain
see
Figure 4
f = 100 MHz
f = 1 GHz
f = 1.8 GHz
f = 2.2 GHz
f = 2.6 GHz
f = 3 GHz
s
11
2
s
22
2
input return loss
output return loss
f = 1 GHz
f = 2.2 GHz
Z
L
= 50
f = 1 GHz
f = 2.2 GHz
Z
L
= 75
f = 1 GHz
f = 2.2 GHz
s
12
2
isolation
see
Figure 3
f = 1 GHz
f = 2.2 GHz
NF
noise figure
see
Figure 7
f = 1 GHz
f = 2.2 GHz
B
K
bandwidth
stability factor
3 dB below flat gain at f = 1 GHz
see
Figure 8
f = 1 GHz
f = 2.2 GHz
P
L(sat)
P
L(1dB)
saturated load power
load power at 1 dB gain
compression
f = 1 GHz
f = 2.2 GHz
f = 1 GHz
f = 2.2 GHz
1.5
0.9
12.5
8.8
10.5
5.0
1.6
1.0
12.9
9.3
11.2
5.7
-
-
-
-
-
-
dBm
dBm
dBm
dBm
-
-
-
4.2
4.1
2.5
4.3
4.3
-
dB
dB
GHz
40
35
42
37
-
-
dB
dB
12
12
16.8
17.7
-
-
dB
dB
15
12
18.9
16.7
-
-
dB
dB
29.0
31.5
34.0
33.0
29.0
25.0
11
7.5
30.0
32.3
35.2
34.1
30.5
26.4
12.2
8.8
31.0
33.0
36.5
35.5
32.0
28.0
-
-
dB
dB
dB
dB
dB
dB
dB
dB
Conditions
RF input; AC coupled
Min
-
17
Typ
5
21.0
Max
6
25
Unit
V
mA
BGM1014
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 19 September 2011
3 of 14
NXP Semiconductors
BGM1014
MMIC wideband amplifier
Table 8.
Characteristics
…continued
V
S
= 5 V; I
S
= 21.1 mA; T
j
= 25
C; measured on demo board; unless otherwise specified.
Symbol Parameter
IP3
in
IP3
out
IM2
input third order intercept point
Conditions
f = 1 GHz
f = 2.2 GHz
output third order intercept point f = 1 GHz
f = 2.2 GHz
second order intermodulation
distortion
f
0
= 1 GHz; P
L
=
10
dBm
f
0
= 1 GHz; P
L
=
5
dBm
Min
13
21
19.5
14
36
33
Typ
11.8
19
20.5
15.1
37
34
Max
-
-
-
-
-
-
Unit
dBm
dBm
dBm
dBm
dBc
dBc
90°
+1
135°
+0.5
+2
45°
1.0
0.8
0.6
0.4
0.2
5
10
0°
0
+0.2
100MHz
+5
180°
0
0.2
0.5
1
3GHz
2
−0.2
−5
−135°
−0.5
−1
−90°
−2
−45°
1.0
001aac489
I
S
= 21.1 mA; V
S
= 5 V; P
D
=
35
dBm; Z
o
= 50
Fig 1.
Input reflection coefficient (s
11
); typical values
BGM1014
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 19 September 2011
4 of 14
NXP Semiconductors
BGM1014
MMIC wideband amplifier
90°
+1
135°
+0.5
+2
45°
1.0
0.8
0.6
100MHz
+0.2
+5
0.4
0.2
180°
0
0.2
0.5
3GHz
1
2
5
10
0°
0
−0.2
−5
−135°
−0.5
−1
−90°
−2
−45°
1.0
001aac490
I
S
= 21.1 mA; V
S
= 5 V; P
D
=
35
dBm; Z
o
= 50
Fig 2.
0
s
12 2
(dB)
−10
Output reflection coefficient (s
22
); typical values
001aac491
50
s
21 2
(dB)
40
001aac492
−20
30
−30
20
(1)
(2)
(3)
−40
−50
10
0
1000
2000
f (MHz)
3000
0
1000
2000
f (MHz)
3000
I
S
= 21.1 mA; V
S
= 5 V; P
D
=
35
dBm; Z
o
= 50
P
D
=
35
dBm; Z
o
= 50
(1) I
S
= 25.6 mA; V
S
= 5.5 V
(2) I
S
= 21.5 mA; V
S
= 5 V
(3) I
S
= 16.6 mA; V
S
= 4.5 V
Fig 3.
Isolation (s
12
2
) as a function of frequency;
typical values
Fig 4.
Insertion gain (s
21
2
) as a function of
frequency; typical values
BGM1014
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 19 September 2011
5 of 14
京公网安备 11010802033920号
EEWORLD
