MEMORY MODULE
DDR3 SDRam 256Mx32-BGA
DDR3 Synchronous Dynamic Ram
3D3D8G32YB2496
8Gbit DDR3 SDRam organized as 256Mx32
Pin Assignment (Top View)
Main applications:
Embedded Systems
Workstations
Servers
Super Computers
Test Systems
BGA 136 (Pitch : 0.80 mm)
Features and Benefits
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JEDEC-standard ball-out
Combines two 4Gb x16 devices in one package
Vdd=VddQ = +1.35V, backward compatible to
1.5V operation
Differential bidirectional data strobe
8n-bit prefetch architecture
8 internal banks per memory
Nominal and dynamic on-die termination
Programmable CAS latency
Posted CAS additive latency
Fixed burst lengths of 8 and burst chp (BC) of 4
Selectable BC4 or BL8 on-the-fly
Self refresh mode
Write leveling
Multipurpose register
Output driver calibration
Clock rate available : 1066, 1333 and 1600 Mbps
Commercial, Industrial and Military temperature
range.
FUNCTIONAL Block Diagram
DM2
DQS2, DQS2#
DQ[23 :16]
DM0
DQS0, DQS0#
DQ[7 : 0]
DM1
DQS1, DQS1#
DQ[15 :8]
DM3
DQS3, DQS3#
DQ[31 : 24]
1
256Mx16
ZQ0
General description
3D Plus offers a new 8Gbit
DDR3 SDRAM
cube with a
compatible JEDEC standard footprint.
This product embeds 2 chips with a capacity of 4Gb
(256Mx16) each.
Our products are available at 1066, 1333 and 1600 Mbps in
Commercial, Industrial and Military temperature range.
Thanks to the high density patented technology the
memories are embedded in a small form factor device
without compromising electrical or thermal performance.
This device is ideal for high density memory applications
that require high speed transfer and compatibility with
standard servers and networking equipment.
DDR3 Memory Module
2
256Mx16
ZQ1
(All other signals are common to the devices)
PRELIMINARY
3D Plus SA reserves the right to cancel product or specifications without notice
3DFP-0496-REV 1 - AUGUST 2012
MEMORY MODULE
DDR3 SDRam 256Mx32-BGA
DDR3 Synchronous Dynamic Ram
3D3D8G32YB2496
8Gbit DDR3 SDRam organized as 256Mx32
DC OPERATING CONDITIONS
Parameter
Supply Voltage
I/O Supply Voltage
I/O Capacitance
Inputs Capacitance
ABSOLUTE MAXIMUM DC RATINGS
Min
1.283
1.283
1.5
0.75
Symbol
V
DD
V
DDQ
C
IO
C
I
Max
1.45
1.45
2.1
1.2
Unit
V
V
pF
pF
Parameter
Voltage on any ball relative to V
SS
Input Leakage Current
Vref Supply Leakage Current
Storage temperature
Symbol
V
IN
, V
OUT
Ii
IVref
T
STG
Min
-0.4
-4
-2
-55
Max
+1,975
+4
+2
+150
Unit
V
µA
µA
°C
Electrical Characteristics
Note
:
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS"
are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could
affect device reliability
Parameter
Operating Current (one bank active)
Precharge Power Down Current
Room Temp Self Refresh
Symbol
I
DD1
I
DD2P0
I
DD6
Value
230
30
44
Unit
mA
mA
mA
3D3D8G32YB2496
Temperature Range
C
= 0°C ~ +70°C
I
= -40°C ~ +85°C
M =
-55°C + 125°C
X
Main Sales Office:
FRANCE
3D PLUS
408, rue Hélène Boucher ZI.
78532 BUC Cedex
Tel : 33 (0)13 0 83 26 50
Fax : 33 (0)1 39 56 25 89
Web :
www.3d-plus.com
e-mail :
sales@3d-plus.com
DISTRIBUTOR
3D PLUS USA, Inc
USA
6633 Eldorado Parkway
Suite 420
Mckinney, TX 75070
Tel : (241) 733-8505
Tel : (241) 733-8506
e-mail :
sales@3d-plus.com
DDR3 Memory Module
PRELIMINARY
3D Plus SA reserves the right to cancel product or specifications without notice
3DFP-0496-REV 1 - AUGUST 2012
51mcu
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