EEWORLDEEWORLDEEWORLD

Part Number

Search

BA1F4Z

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size81KB,4 Pages
ManufacturerNEC Electronics
Download Datasheet Parametric View All

BA1F4Z Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

BA1F4Z Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNEC Electronics
package instructionIN-LINE, R-PSIP-T3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)100
JESD-30 codeR-PSIP-T3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)6000 ns
Maximum opening time (tons)200 ns
Base Number Matches1
DATA SHEET
COMPOUND TRANSISTOR
BA1F4Z
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
FEATURES
• On-chip bias resistor
(R
1
= 22 kΩ)
• Complementary transistor with BN1F4Z
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (Pulse)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
P
T
T
j
T
stg
Ratings
60
50
5
100
200
250
150
−55
to +150
Unit
V
V
V
mA
mA
mW
°C
°C
* PW
10 ms, duty cycle
50 %
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector cutoff current
DC current gain
DC current gain
Collector saturation voltage
Low level input voltage
High level input voltage
Input resistance
Turn-on time
Storage time
Turn-off time
Symbol
I
CBO
h
FE1
**
h
FE2
**
V
CE(sat)
**
V
IL
**
V
IH
**
R
1
t
on
t
stg
t
off
V
CC
= 5.0 V, R
L
= 1.0 kΩ
V
I
= 5.0 V, PW = 2.0
µ
s
duty cycle≤2 %
Conditions
V
CB
= 50 V, I
E
= 0
V
CE
= 5.0 V, I
C
= 5.0 mA
V
CE
= 5.0 V, I
C
= 50 mA
I
C
= 5.0 mA, I
B
= 0.25 mA
V
CE
= 5.0 V, I
C
= 100
µ
A
V
CE
= 0.2 V, I
C
= 5.0 mA
3.0
15.4
135
100
330
290
0.04
0.55
1.05
22
28.6
0.2
5.0
6.0
0.2
0.5
MIN.
TYP.
MAX.
100
600
Unit
nA
V
V
V
kΩ
µ
s
µ
s
µ
s
** Pulse test PW
350
µ
s, duty cycle
2 %
h
FE
CLASSIFICATION
Marking
h
FE1
Q
135 to 270
P
200 to 400
K
300 to 600
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16174EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2072  929  2498  1243  711  42  19  51  26  15 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号