MRF448 datasheet, PDF - EEWORLD Datasheet

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MRF448: Descriptiontransistors RF mosfet RF transistor; Categorysemiconductor Discrete semiconductor; File Size31KB，1 Pages; ManufacturerASI [ASI Semiconductor, Inc]; Environmental Compliance

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MRF448

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The

MRF448

is Designed for

High Linearity Class AB HF Power Amplifier

Applications up to 30 MHz.

PACKAGE STYLE .500 4L FLG

.112x45°

FULL R

FEATURES:

•

= 14 dB Typical at 220 W/30 MHz

•

IMD

= -32 dBc Typ. at 220 W

(PEP)

•

Omnigold™

Metalization System

Ø.125 NOM.

MAXIMUM RATINGS

CBO

CEO

EBO

DISS

STG

16 A

100 V

50 V

4.0 V

290 W @ T

= 25 °C

-65 °C to +200 °C

-65 °C to +150 °C

0.6 °C/W

DIM

.980 / 24.89

.970 / 24.64

.495 / 12.57

.003 / 0.08

.090 / 2.29

.150 / 3.81

.245 / 6.22

.720 / 18.28

.125 / 3.18

MINIMUM

inches / mm

I J

MAXIMUM

inches / mm

.220 / 5.59

.125 / 3.18

.230 / 5.84

.255 / 6.48

.7.30 / 18.54

.980 / 24.89

.505 / 12.83

.007 / 0.18

.110 / 2.79

.175 / 4.45

.280 / 7.11

1.050 / 26.67

ORDER CODE: ASI10866

CHARACTERISTICS

SYMBOL

CBO

CEO

EBO

CEO

CES

IMD

= 25 °C

NONETEST

CONDITIONS

= 100 mA

= 200 mA

= 10 mA

= 30 V

= 50 V

= 10 V

= 50 V

= 5.0 A

f = 1.0 MHz

MINIMUM TYPICAL MAXIMUM

100

4.0

350

-33

-30

450

UNITS

---

= 50 V

=250 mA

OUT

= 250 W

(CW)

OUT

= 250 W

(PEP)

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE

•

NORTH HOLLYWOOD, CA 91605

•

(818) 982-1200

•

FAX (818) 765-3004

Specifications are subject to change without notice.

REV. C

1/1

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	MRF448
Description	transistors RF mosfet RF transistor

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