SMD Type
NPN Transistors
KST8050
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
Unit: mm
Features
+0.1
2.4
-0.1
+0.1
1.3
-0.1
Collector Current: I
C
=1.5A
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
40
25
5
1.5
0.3
150
-55 to 150
Unit
V
V
V
A
W
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base Breakdown voltage
Collector-base cut-off current
Collector-emitter cut-off current
Emitter-base cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
Testconditons
I
C
= 100 ìA , I
E
= 0
I
C
= 1mA , I
B
= 0
I
E
= 100 ìA , I
C
= 0
V
CB
= 40 V , I
E
= 0
V
CE
= 20 V , I
B
= 0
V
EB
= 5 V , I
C
= 0
V
CE
= 1 V , I
C
= 100 mA
V
CE
= 1 V , I
C
= 800 mA
I
C
= 800 mA , I
B
= 80 mA
I
C
= 800 mA , I
B
= 80 mA
V
CE
= 10 V , I
C
= 50 mA , f = 30 MHz
100
120
40
0.5
1.2
V
V
MHz
Min
40
25
5
0.1
0.1
0.1
400
Typ
Max
Unit
V
V
V
A
A
A
h
FE
Classification
Marking
Rank
hFE
L
120 200
Y1
H
200 350
J
300 400
+0.1
0.38
-0.1
0-0.1
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1
SMD Type
KST8050
Typical Characteristics
Transistors
Fig.1 Static Characteristic
Fig.2 DC Current Gain
Fig.3 Base Emitter ON Voltage
Fig.4 Base Emitter Saturation Voltage
Collector Emitter Saturation Voltage
Fig.5 Current Gain Bandwidth Product
Fig.6 Colletor Output Capacitance
2
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