BLF6G20-40
Power LDMOS transistor
Rev. 01 — 19 January 2009
Product data sheet
1. Product profile
1.1 General description
40 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1.
Typical performance
RF performance at T
case
= 25
°
C in a common source class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
[1]
f
(MHz)
1805 to 1880
V
DS
(V)
28
P
L(AV)
(W)
2.5
G
p
(dB)
18.8
η
D
(%)
15
ACPR
(dBc)
−46
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 5 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I
Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz,
a supply voltage of 28 V and an I
Dq
of 360 mA:
N
Average output power = 2.5 W
N
Power gain = 18.8 dB (typ)
N
Efficiency = 15 %
N
ACPR =
−46
dBc
I
Easy power control
I
Integrated ESD protection
I
Excellent ruggedness
I
High efficiency
I
Excellent thermal stability
I
Designed for broadband operation (1800 MHz to 2000 MHz)
I
Internally matched for ease of use
I
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
NXP Semiconductors
BLF6G20-40
Power LDMOS transistor
1.3 Applications
I
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
1800 MHz to 2000 MHz frequency range.
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
1
Graphic symbol
1
3
2
2
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name
BLF6G20-40
-
Description
flanged ceramic package; 2 mounting holes; 2 leads
Version
SOT608A
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Conditions
Min
-
−0.5
-
−65
-
Max
65
+13
13
+150
225
Unit
V
V
A
°C
°C
5. Thermal characteristics
Table 5.
Symbol
Thermal characteristics
Parameter
Conditions
T
case
= 80
°C;
P
L(AV)
= 12.5 W
Typ Unit
1.7
K/W
R
th(j-case)
thermal resistance from junction to case
BLF6G20-40_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 19 January 2009
2 of 11
NXP Semiconductors
BLF6G20-40
Power LDMOS transistor
6. Characteristics
Table 6.
Characteristics
T
j
= 25
°
C per section; unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown
voltage
V
GS(th)
V
GSq
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
Conditions
V
GS
= 0 V; I
D
= 0.5 mA
V
DS
= 10 V; I
D
= 72 mA
V
DS
= 28 V; I
D
= 300 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 3.6 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 2.5 A
Min
65
1.4
1.70
-
-
-
-
-
Typ
-
1.9
2.30
-
12.5
-
5
0.2
Max
-
2.4
2.79
1.5
-
150
-
-
Unit
V
V
V
µA
A
nA
S
Ω
7. Application information
Table 7.
Application information
Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1 to 64 PDPCH; f
1
= 1802.5 MHz; f
2
= 1807.5 MHz; f
3
= 1872.5 MHz; f
4
= 1877.5 MHz;
RF performance at V
DS
= 28 V; I
Dq
= 360 mA; T
case
= 25
°
C; unless otherwise specified; in a
class-AB production test circuit.
Symbol
G
p
η
D
ACPR
Parameter
power gain
drain efficiency
adjacent channel power ratio
Conditions
P
L(AV)
= 2.5 W
P
L(AV)
= 2.5 W
P
L(AV)
= 2.5 W
Min
17.5
13
-
Typ
18.8
15
−46
Max
-
-
−42
Unit
dB
%
dBc
7.1 Ruggedness in class-AB operation
The BLF6G20-40 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 28 V;
I
Dq
= 360 mA; P
L
= 40 W (CW); f = 1880 MHz.
BLF6G20-40_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 19 January 2009
3 of 11
NXP Semiconductors
BLF6G20-40
Power LDMOS transistor
22
G
p
(dB)
21
20
19
18
17
16
15
0
10
20
30
40
η
D
G
p
001aaj410
70
60
50
40
30
20
10
η
D
(%)
0
50
P
L
(W)
V
DS
= 28 V; I
Dq
= 360 mA; f = 1842 MHz.
Fig 1.
One-tone CW power gain and drain efficiency as functions of load power; typical values
22
G
p
(dB)
21
G
p
001aaj411
60
η
D
(%)
50
−10
IMD
(dBc)
−20
−30
001aaj412
IMD3
20
40
−40
IMD5
19
η
D
18
30
−50
20
−60
−70
−80
0
5
10
15
20
25
30
P
L
(W)
IMD7
17
10
16
0
5
10
15
20
0
25
30
P
L
(W)
V
DS
= 28 V; I
Dq
= 360 mA; f
1
= 1843 MHz;
f
2
= 1843.1 MHz.
V
DS
= 28 V; I
Dq
= 360 mA; f
1
= 1843 MHz;
f
2
= 1843.1 MHz.
Fig 2.
Two-tone CW power gain and drain efficiency
as functions of peak envelope load power;
typical values
Fig 3.
Two-tone CW intermodulation distortion as a
function of peak envelope load power;
typical values
BLF6G20-40_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 19 January 2009
4 of 11
NXP Semiconductors
BLF6G20-40
Power LDMOS transistor
22
G
p
(dB)
21
001aaj413
50
η
D
(%)
40
−20
ACPR
(dBc)
−30
001aaj414
20
G
p
30
−40
19
η
D
20
−50
18
10
17
0
4
8
12
P
L
(W)
0
16
−60
0
4
8
12
P
L
(W)
16
V
DS
= 28 V; I
Dq
= 360 mA; f
1
= 1840.5 MHz;
f
2
= 1845.5 MHz; carrier spacing 5 MHz.
V
DS
= 28 V; I
Dq
= 360 mA; f
1
= 1840.5 MHz;
f
2
= 1845.5 MHz; carrier spacing 5 MHz.
Fig 4.
2-carrier W-CDMA power gain and drain
efficiency as functions of average load power;
typical values
Fig 5.
2-carrier W-CDMA adjacent power channel
ratio as function of average load power;
typical values
8. Test information
V
GG
C3
C4
C5
R1
C8
C9
C10
C11
C12
C13
C14
C6
V
DD
input
50
Ω
C2
C16
output
50
Ω
C15
C1
C7
001aah550
See
Table 8
for list of components.
Fig 6.
Test circuit for operation at 1805 MHz and 1880 MHz
BLF6G20-40_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 19 January 2009
5 of 11
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