®
OPA111
Low Noise Precision
Difet
®
OPERATIONAL AMPLIFIER
FEATURES
q
LOW NOISE: 100% Tested, 8nV
√
Hz max
(10kHz)
q
q
q
q
q
LOW BIAS CURRENT: 1pA max
LOW OFFSET: 250
µ
V max
LOW DRIFT: 1
µ
V/
°
C max
HIGH OPEN-LOOP GAIN: 120dB min
HIGH COMMON-MODE REJECTION:
100dB min
APPLICATIONS
q
PRECISION INSTRUMENTATION
q
DATA ACQUISITION
q
TEST EQUIPMENT
q
OPTOELECTRONICS
q
MEDICAL EQUIPMENT—CAT SCANNER
q
RADIATION HARD EQUIPMENT
DESCRIPTION
The OPA111 is a precision monolithic dielectrically
isolated FET (
Difet
®
) operational amplifier. Outstand-
ing performance characteristics allow its use in the
most critical instrumentation applications.
Noise, bias current, voltage offset, drift, open-loop
gain, common-mode rejection, and power supply re-
jection are superior to BIFET
®
amplifiers.
Very low bias current is obtained by dielectric isola-
tion with on-chip guarding.
Laser trimming of thin-film resistors gives very low
offset and drift. Extremely low noise is achieved with
patented circuit design techniques. A new cascode
design allows high precision input specifications and
reduced susceptibility to flicker noise.
Standard 741 pin configuration allows upgrading of
existing designs to higher performance levels.
Case and
Substrate
8
–In
2
+In
3
Noise-Free Cascode
*
Output
6
Trim
1
Trim
5
10kΩ
2kΩ
2kΩ
+V
CC
7
10kΩ
2kΩ
2kΩ
–V
CC
4
*Patented
BIFET
®
National Semiconductor Corp.,
Difet
®
Burr-Brown Corp.
International Airport Industrial Park • Mailing Address: PO Box 11400
Tel: (520) 746-1111 • Twx: 910-952-1111 • Cable: BBRCORP •
© 1984 Burr-Brown Corporation
• Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706
Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132
PDS-526K
Printed in U.S.A. August, 1995
SPECIFICATIONS
ELECTRICAL
At V
CC
=
±15VDC
and T
A
= +25°C unless otherwise noted.
OPA111AM
PARAMETER
INPUT
NOISE
Voltage, f
O
= 10Hz
f
O
= 100Hz
f
O
= 1kHz
f
O
= 10kHz
f
B
= 10Hz to 10kHz
f
B
= 0.1Hz to 10Hz
Current, f
B
= 0.1Hz to 10Hz
f
O
= 0.1Hz thru 20kHz
OFFSET VOLTAGE
(2)
Input Offset Voltage
Average Drift
Supply Rejection
BIAS CURRENT
(2)
Input Bias Current
OFFSET CURRENT
(2)
Input Offset Current
IMPEDANCE
Differential
Common-Mode
VOLTAGE RANGE
Common-Mode Input Range
Common-Mode Rejection
OPEN-LOOP GAIN, DC
Open-Loop Voltage Gain
FREQUENCY RESPONSE
Unity Gain, Small Signal
Full Power Response
Slew Rate
Settling Time, 0.1%
0.01%
Overload Recovery,
50% Overdrive
(3)
RATED OUTPUT
Voltage Output
Current Output
Output Resistance
Load Capacitance Stability
Short Circuit Current
POWER SUPPLY
Rated Voltage
Voltage Range, Derated
Performance
Current, Quiescent
TEMPERATURE RANGE
Specification
Operating
Storage
θ
Junction-Ambient
Ambient Temp.
Ambient Temp.
Ambient Temp.
–25
–55
–65
200
+85
+125
+150
–25
–55
–65
200
+85
+125
+150
–55
–55
–65
200
+125
+125
+150
°C
°C
°C
°C/W
±15
±5
I
O
= 0mADC
2.5
±18
3.5
±5
2.5
±15
±18
3.5
±5
2.5
±15
±18
3.5
VDC
VDC
mA
R
L
= 2kΩ
V
O
=
±10VDC
DC, Open Loop
Gain = +1
±11
±5.5
±12
±10
100
1000
40
±11
±5.5
±12
±10
100
1000
40
±11
±5.5
±12
±10
100
1000
40
V
mA
Ω
pF
mA
20Vp-p, R
L
= 2kΩ
V
O
=
±10V,
R
L
= 2kΩ
Gain = –1, R
L
= 2kΩ
10V Step
Gain = –1
16
1
2
32
2
6
10
5
16
1
2
32
2
6
10
5
16
1
2
32
2
6
10
5
MHz
kHz
V/µs
µs
µs
µs
R
L
≥
2kΩ
114
125
120
125
114
125
dB
±10
90
100%
100%
100%
100%
100%
Tested
Tested
Tested
Tested
Tested
40
15
8
6
0.7
1.6
9.5
0.5
±100
±2
110
±3
±0.8
±0.5
10
13
|| 1
10
14
|| 3
±11
110
±10
100
80
40
15
8
1.2
3.3
15
0.8
±500
±5
100
±31
±2
±1.5
30
11
7
6
0.6
1.2
7.5
0.4
±50
±0.5
110
±3
±0.5
±0.25
10
13
|| 1
10
14
|| 3
±11
110
±10
90
60
30
12
8
1
2.5
12
0.6
±250
±1
90
±10
±1
±0.75
40
15
8
6
0.7
1.6
9.5
0.5
±100
±2
110
±3
±0.8
±0.5
10
13
|| 1
10
14
|| 3
±11
110
80
40
15
8
1.2
3.3
15
0.8
±500
±5
±31
±2
±1.5
nV/√Hz
nV/√Hz
nV/√Hz
nV/√Hz
µVrms
µVp-p
fAp-p
fA/√Hz
µV
µV/°C
dB
µV/V
pA
pA
Ω
|| pF
Ω
|| pF
V
dB
CONDITION
MIN
TYP
MAX
MIN
OPA111BM
TYP
MAX
MIN
OPA111SM
TYP
MAX
UNITS
(1)
(1)
(1)
V
CM
= 0VDC
T
A
= T
MIN
to T
MAX
V
CC
=
±10V
to
±18V
90
V
CM
= 0VDC
V
CM
= 0VDC
V
IN
=
±10VDC
10
10
10
NOTES: (1) Sample tested—this parameter is guaranteed. (2) Offset voltage, offset current, and bias current are measured with the units fully warmed up. (3) Overload
recovery is defined as the time required for the output to return from saturation to linear operation following the removal of a 50% input overdrive.
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes
no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without
notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant any BURR-
BROWN product for use in life support devices and/or systems.
®
OPA111
2
ELECTRICAL (FULL TEMPERATURE RANGE SPECIFICATIONS)
At V
CC
=
±15VDC
and T
A
= T
MIN
to T
MAX
unless otherwise noted.
OPA111AM
PARAMETER
TEMPERATURE RANGE
Specification Range
INPUT
OFFSET VOLTAGE
(1)
Input Offset Voltage
Average Drift
Supply Rejection
BIAS CURRENT
(1)
Input Bias Current
OFFSET CURRENT
(1)
Input Offset Current
VOLTAGE RANGE
Common-Mode Input Range
Common-Mode Rejection
OPEN-LOOP GAIN, DC
Open-Loop Voltage Gain
RATED OUTPUT
Voltage Output
Current Output
Short Circuit Current
POWER SUPPLY
Current, Quiescent
I
O
= 0mADC
2.5
3.5
2.5
3.5
2.5
3.5
mA
R
L
= 2kΩ
V
O
=
±10VDC
V
O
= 0VDC
±10.5
±5.25
10
±11
±10
40
±11
±5.25
10
±11.5
±10
40
±11
±5.25
10
±11.5
±10
40
V
mA
mA
R
L
≥
2kΩ
110
120
114
120
110
120
dB
V
CM
= 0VDC
V
CC
=
±10V
to
±18V
86
±220
±2
100
±10
±50
±30
±10
86
±11
100
±1000
±5
90
±50
±250
±200
±10
90
±110
±0.5
100
±10
±30
±15
±11
100
±500
±1
86
±32
±130
±100
±10
86
±300
±2
100
±10
±820
±510
±11
100
±1500
±5
±50
±4100
±3100
µV
µV/°C
dB
µV/V
pA
pA
V
dB
Ambient Temp.
–25
+85
–25
+85
–55
+125
°C
CONDITION
MIN
TYP
MAX
MIN
OPA111BM
TYP
MAX
MIN
OPA111SM
TYP
MAX
UNITS
V
CM
= 0VDC
V
CM
= 0VDC
V
IN
=
±10VDC
NOTES: (1) Offset voltage, offset current, and bias current are measured with the units fully warmed up.
CONNECTION DIAGRAM
Top View
ABSOLUTE MAXIMUM RATINGS
Supply ...........................................................................................
±18VDC
Internal Power Dissipation
(1)
......................................................... 750mW
Differential Input Voltage
(2)
..........................................................
±36VDC
Input Voltage Range
(2)
................................................................
±18VDC
Storage Temperature Range ......................................... –65°C to +150°C
Operating Temperature Range ..................................... –55°C to +125°C
Lead Temperature (soldering, 10s) ............................................... +300°C
Output Short Circuit Duration
(3)
.............................................. Continuous
Junction Temperature .................................................................... +175°C
NOTES: (1) Packages must be derated based on
θ
JC
= 150°C/W or
θ
JA
= 300°C/W. (2) For supply voltages less than
±18VDC,
the absolute
maximum input voltage is equal to +18V > V
IN
> –V
CC
– 6V. See Figure
2. (3) Short circuit may be to power supply common only. Rating applies
to +25°C ambient. Observe dissipation limit and T
J
.
Substrate and Case
Offset
Trim 1
–In 2
8
7 +V
CC
OPA111
6
Output
+In 3
4
–V
CC
5 Offset
Trim
PACKAGE INFORMATION
PACKAGE DRAWING
MODEL
OPA111AM
OPA111BM
OPA111SM
PACKAGE
TO-99
TO-99
TO-99
NUMBER
(1)
001
001
001
NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix D of Burr-Brown IC Data Book.
ORDERING INFORMATION
TEMPERATURE
MODEL
OPA111AM
OPA111BM
OPA111SM
PACKAGE
TO-99
TO-99
TO-99
RANGE
–25°C to +85°C
–25°C to +85°C
–55°C to +125°C
OFFSET
VOLTAGE,
MAX (
µ
V)
±500
±250
±500
®
3
OPA111
DICE INFORMATION
PAD
1
2
3
4
5
6
7
8
FUNCTION
Offset Trim
–In
+In
–V
S
Offset Trim
Output
+V
S
Substrate
Substrate Bias:
This Dielectrically-Isolated
Substrate is normally connected to common.
MECHANICAL INFORMATION
MILS (0.001")
Die Size
Die Thickness
Min. Pad Size
Backing:
Transistor Count:
95 x 71
±5
20
±3
4x4
MILLIMETERS
2.41 x 1.80
±0.13
0.51
±0.08
0.10 x 0.10
None
44
OPA111AD DIE TOPOGRAPHY
TYPICAL PERFORMANCE CURVES
T
A
= +25°C, V
CC
=
±15VDC
unless otherwise noted.
INPUT CURRENT NOISE SPECTRAL DENSITY
100
1k
INPUT VOLTAGE NOISE SPECTRAL DENSITY
Current Noise (fA/√Hz
10
Voltage Noise (nV/ Hz)
100
AM, SM
BM
10
1
BM
0.1
1
10
100
1k
Frequency (Hz)
10k
100k
1M
1
1
10
100
1k
Frequency (Hz)
10k
100k
1M
®
OPA111
4
TYPICAL PERFORMANCE CURVES
(CONT)
T
A
= +25°C, V
CC
=
±15VDC
unless otherwise noted.
TOTAL* INPUT VOLTAGE NOISE SPECTRAL
DENSITY vs SOURCE RESISTANCE
1k
R
S
= 10MΩ
Voltage Noise (nV/ Hz)
Voltage Noise (µVp-p)
TOTAL* INPUT VOLTAGE NOISE (PEAK-TO-PEAK)
vs SOURCE RESISTANCE
1k
R
S
= 1MΩ
100
R
S
= 100kΩ
100
*Includes contribution
from source resistance.
10
BM
R
S
= 100Ω
*Includes contribution
from source resistance.
10
BM
f
B
= 0.1Hz to 10Hz
1
0.1
1
10
100
Frequency (Hz)
1k
10k
100k
1
10
4
10
5
10
6
10
7
10
8
10
9
10
10
Source Resistance (Ω)
VOLTAGE AND CURRENT NOISE SPECTRAL
DENSITY vs TEMPERATURE
12
f
O
= 1kHz
100
BIAS AND OFFSET CURRENT
vs TEMPERATURE
1k
1k
100
Voltage Noise (nV/√Hz)
Current Noise (fA/√Hz)
Bias Current (pA)
100
BM
Offset Current (pA)
®
10
10
10
10
8
1
1
1
6
0.1
0.1
0.1
4
–75
–50
–25
0
25
50
75
100
Temperature (°C)
0.01
125
0.01
–50
–25
0
25
50
75
100
Ambient Temperature (°C)
0.01
125
BIAS AND OFFSET CURRENT
vs INPUT COMMON-MODE VOLTAGE
10
10
140
POWER SUPPLY REJECTION
vs FREQUENCY
Power Supply Rejection (dB)
120
100
80
60
40
20
0
1
10
100
1k
10k
100k
1M
10M
Frequency (Hz)
1
Bias Current
1
0.1
Offset Current
0.1
0.01
–15
–10
–5
0
5
10
15
Common-Mode Voltage (V)
0.01
Offset Current (pA)
Bias Current (pA)
5
OPA111
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