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BAT18-04

Description
silicon RF switching diode
File Size31KB,1 Pages
ManufacturerKEXIN
Websitehttp://www.kexin.com.cn/html/index.htm
Download Datasheet View All

BAT18-04 Overview

silicon RF switching diode

SMD Type
Silicon RF Switching Diode
BAT18;BAT18-04
BAT18-05;BAT18-06
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Diodes
Unit: mm
+0.1
2.4
-0.1
Features
Low-loss VHF/UHF switch above 10 MHz
Pin diode with low forward resistance
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Reverse Voltage
Forward Current
Operating and storage temperature range
Junction - ambient
Symbol
V
R
I
F
T
op,
T
stg
R
th JA
Value
35
100
-55 to +150
450
K/W
Unit
V
mA
Electrical C haracteristics Ta = 25
Param eter
Forward voltage
Reverse current
Diode capacitance
Forward resistance
Series inductance
Sym bol
V
F
I
R
C
T
rf
L
s
Conditions
I
F
= 100 m A
V
R
= 20 V
V
R
= 20 V, T
A
= 60
V
R
= 20 V, f = 1 M Hz
I
F
= 5 m A, f = 100 M Hz
0.75
0.4
2
M in
Typ
0.38
M ax
1.2
20
200
1
0.7
nH
pF
Unit
V
nA
Marking
Type
Marking
BAT18
A2
BAT18-04
AU
BAT18-05
AS
BAT18-06
AT
0-0.1
www.kexin.com.cn
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