Si41 33G
Si412 3G/22G/13G/12G
D
U A L
-B
A N D
R F S
Y N T H E S I Z E R
W
I T H
I
N T E G R A T E D
V C O
S
F
OR
GSM
AND
GPRS W
IRELESS
C
OMMUNICATIONS
Features
"
"
RF1: 900 MHz to 1.8 GHz
RF2: 750 MHz to 1.5 GHz
IF: 500 MHz to 1000 MHz
!
!
!
!
!
!
IF Synthesizer
"
Integrated VCOs, Loop Filters,
!
!
Varactors, and Resonators
Minimal External Components
Required
Applications
Pin Assignments
!
GSM, DCS1800, and PCS1900
Cellular Telephones
!
!
GPRS Data Terminals
HSCSD Data Terminals
S C LK
S D ATA
S
i4
1
!
Description
The Si4133G is a monolithic integrated circuit that performs both IF and
dual-band RF synthesis for GSM and GPRS wireless communications
applications. The Si4133G includes three VCOs, loop filters, reference and
VCO dividers, and phase detectors. Divider and power down settings are
programmable through a three-wire serial interface.
33
G
-B
T
!
Dual-Band RF Synthesizers
!
Fast Settling Time: 140
µs
Low Phase Noise
Programmable Power Down Modes
1 µA Standby Current
18 mA Typical Supply Current
2.7 V to 3.6 V Operation
Packages: 24-Pin TSSOP and
28-Pin MLP
Ordering Information:
See page 28.
Si4133G-BT
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
SENB
VDDI
IF O U T
GNDI
IF L B
IF L A
GNDD
VDDD
GNDD
X IN
PW DNB
AUXOUT
GNDR
R FL D
R FL C
GNDR
R FL B
Functional Block Diagram
R efe re nce
A m p lifier
P ow er
D ow n
C ontrol
R FL A
GNDR
GNDR
X IN
÷
65
P hase
D etector
R F1
R FL A
R FL B
R FO U T
VDDR
P W DN B
÷
N
R FO U T
S DA TA
S CL K
S EN B
SDATA
IFOUT
23
GNDR
SENB
SCLK
R FL D
R F2
22-b it
D ata
R egister
÷
N
GNDR
1
2
3
4
5
6
7
28
27
26
25
24
22
21
20
19
18
17
16
15
GNDI
VDD I
S erial
Interfa ce
P hase
D etector
R FL C
Si4133G-BM
GNDI
IF L B
IF L A
GNDD
VDDD
GNDD
X IN
A UX O U T
Test
Mux
P hase
D etector
IF
IFO UT
R FLD
R FLC
÷
N
IFL A
IFL B
GNDR
R FLB
R FLA
GNDR
8
9
10
11
12
13
14
RFOU T
AUX OU T
GNDR
GNDR
VDDR
PW DNB
Patents pending
Rev. 1.1 4/01
Copyright © 2001 by Silicon Laboratories
Si4133G-DS11
GNDD
Si4133G
T
A B L E O F
C
O N T E N T S
Section
Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Serial Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Setting the VCO Center Frequencies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Self-Tuning Algorithm . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output Frequencies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PLL Loop Dynamics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RF and IF Outputs (RFOUT and IFOUT) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reference Frequency Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Down Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Auxiliary Output (AUXOUT) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Control Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pin Descriptions: Si4133G-BT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pin Descriptions: Si4133G-BM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Ordering Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Si4133G Derivative Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Package Outline: Si4133G-BT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Package Outline: Si4133G-BM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Contact Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Page
4
15
15
15
16
17
17
17
18
18
18
20
24
26
28
28
29
30
32
Rev. 1.1
3
S i4 13 3G
Electrical Specifications
Table 1. Recommended Operating Conditions
Parameter
Ambient Temperature
Supply Voltage
Supply Voltages Difference
Symbol
T
A
V
DD
V
∆
(V
DDR
– V
DDD
),
(V
DDI
– V
DDD
)
Test Condition
Min
–20
2.7
–0.3
Typ
25
3.0
—
Max
85
3.6
0.3
Unit
°C
V
V
Note:
All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
Typical values apply at 3.0 V and an operating temperature of 25°C unless otherwise stated.
Table 2. Absolute Maximum Ratings
1,2
Parameter
DC Supply Voltage
Input Current
3
Input Voltage
3
Storage Temperature Range
Symbol
V
DD
I
IN
V
IN
T
STG
Value
–0.5 to 4.0
±10
–0.3 to V
DD
+0.3
–55 to 150
Unit
V
mA
V
o
C
Notes:
1.
Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation
should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2. This device is a high performance RF integrated circuit with an ESD rating of < 2 kV. Handling and assembly of
this device should only be done at ESD-protected workstations.
3.
For signals SCLK, SDATA, SENB, PWDNB and XIN.
4
Rev. 1.1
Si4133G
Table 3. DC Characteristics
(V
DD
= 2.7 to 3.6 V, T
A
= –20 to 85°C
Parameter
Typical Supply Current
1
RF1 Mode Supply Current
1
RF2 Mode Supply Current
1
IF Mode Supply Current
1
Standby Current
High Level Input Voltage
2
Low Level Input Voltage
2
High Level Input Current
2
Low Level Input Current
2
High Level Output Voltage
3
Low Level Output Voltage
3
Symbol
Test Condition
RF1 and IF Operating
Min
—
—
—
—
Typ
18
13
12
10
1
—
—
—
—
—
—
Max
31
17
17
14
—
—
0.3 V
DD
10
10
—
0.4
Unit
mA
mA
mA
mA
µA
V
V
µA
µA
V
V
PWDNB = 0
V
IH
V
IL
I
IH
I
IL
V
OH
V
OL
V
IH
=
3.6 V,
V
DD
= 3.6 V
V
IL
=
0 V,
V
DD
=
3.6 V
I
OH
= –500 µA
I
OH
= 500 µA
—
0.7 V
DD
—
–10
–10
V
DD
–0.4
—
Notes:
1.
RF1 = 1.55 GHz, RF2 = 1.2 GHz, IF
=
800 MHz
2.
For signals SCLK, SDATA, SENB, and PWDNB.
3.
For signal AUXOUT.
Rev. 1.1
5
京公网安备 11010802033920号
EEWORLD
