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MB85RC16PNF-G-JNE1

Description
IC fram 16kbit 1mhz 8sop
Categorystorage    storage   
File Size1MB,36 Pages
ManufacturerFUJITSU
Websitehttp://edevice.fujitsu.com/fmd/en/index.html
Environmental Compliance
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MB85RC16PNF-G-JNE1 Overview

IC fram 16kbit 1mhz 8sop

MB85RC16PNF-G-JNE1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFUJITSU
package instructionSOP, SOP8,.25
Reach Compliance Codecompliant
JESD-30 codeR-PDSO-G8
length5.05 mm
memory density16384 bit
Memory IC TypeMEMORY CIRCUIT
memory width8
Number of functions1
Number of terminals8
word count2048 words
character code2000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize2KX8
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Encapsulate equivalent codeSOP8,.25
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Certification statusNot Qualified
Maximum seat height1.75 mm
Maximum standby current0.000001 A
Maximum slew rate0.0001 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width3.9 mm
FUJITSU SEMICONDUCTOR
DATA SHEET
DS501-00001-8v0-E
Memory FRAM
16 K (2 K
×
8) Bit I
2
C
MB85RC16
DESCRIPTION
The MB85RC16 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words
×
8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile
memory cells.
Unlike SRAM, the MB85RC16 is able to retain data without using a data backup battery.
The memory cells used in the MB85RC16 have at least 10
12
Read/Write operation endurance per byte, which
is a significant improvement over the number of read and write operations supported by other nonvolatile
memory products.
The MB85RC16 can provide writing in one byte units because the long writing time is not required unlike
Flash memory and E
2
PROM. Therefore, the writing completion waiting sequence like a write busy state is
not required.
FEATURES
: 2,048 words
×
8 bits
: Fully controllable by two ports: serial clock (SCL) and serial data (SDA).
: 1 MHz (Max)
: 10
12
times/byte
: 10 years (
+
85
°C),
95 years (
+
55
°C),
over 200 years (
+
35
°C)
: 2.7 V to 3.6 V
: Operating power supply current 70
μA
(Typ @1 MHz)
Standby current 0.1
μA
(Typ)
• Operation ambient temperature range :
40
°C
to
+
85
°C
• Package
: 8-pin plastic SOP (FPT-8P-M02)
8-pin plastic SON (LCC-8P-M04)
RoHS compliant
Bit configuration
Two-wire serial interface
Operating frequency
Read/Write endurance
Data retention
Operating power supply voltage
Low power consumption
Copyright©2011-2013 FUJITSU SEMICONDUCTOR LIMITED All rights reserved
2013.2

MB85RC16PNF-G-JNE1 Related Products

MB85RC16PNF-G-JNE1 MB85RC16PN-G-AMERE1
Description IC fram 16kbit 1mhz 8sop Memory interface type: I2C Memory capacity: 16Kb (2K x 8) Operating voltage: 2.7V ~ 3.6V Memory type: Non-Volatile

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