LTC5509
300MHz to 3GHz
RF Power Detector
in SC70 Package
FEATURES
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DESCRIPTIO
Temperature Compensated Internal Schottky Diode
RF Detector
Wide Input Frequency Range: 300MHz to 3GHz
Wide Input Power Range: –30dBm to 6dBm
Buffered Detector Output
Wide V
CC
Range of 2.7V to 6V
Low Operating Current: 600µA
Low Shutdown Current: <2µA
SC70 Package
The LTC
®
5509 is an RF power detector for RF applications
operating in the 300MHz to 3GHz range. A temperature
compensated Schottky diode peak detector and buffer
amplifier are combined in a small SC70 package. The
supply voltage range is optimized for operation from a
single lithium-ion cell or 3xNiMH.
The RF input voltage is peak detected using an on-chip
Schottky diode. The detected voltage is buffered and
supplied to the V
OUT
pin without gain compression. Con-
sequently, the output voltage is linearly proportional to the
RF input voltage. A power saving shutdown mode reduces
supply current to less than 2µA.
The LTC5509 operates with input power levels from
–30dBm to 6dBm.
, LTC and LT are registered trademarks of Linear Technology Corporation.
APPLICATIO S
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Multimode Mobile Phone Products
Optical Data Links
Wireless Data Modems
Wireless and Cable Infrastructure
RF Power Alarm
Envelope Detector
TYPICAL APPLICATIO
Output Voltage vs RF Input Power
3000
V
CC
= 3.6V
T
A
= 25°C
850MHz
1.85GHz
2000
3GHz
1500
1000
500
0
0
–30 –25 –20 –15 –10 –5
RF INPUT POWER (dBm)
RF
INPUT
33pF
6
2
LTC5509
V
CC
4
RF
IN
GND
SHDN
GND
5
100pF
V
CC
0.1µF
DISABLE ENABLE
1
V
OUT
3 V
OUT
5509 TA01
V
OUT
OUTPUT VOLTAGE (mV)
300MHz to 3GHz RF Power Detector
2500
U
5
10
5509 TA02
U
U
5509f
1
LTC5509
ABSOLUTE
(Note 1)
AXI U
RATI GS
PACKAGE/ORDER I FOR ATIO
ORDER PART
NUMBER
TOP VIEW
SHDN 1
GND 2
V
OUT
3
6 RF
IN
5 GND
4 V
CC
V
CC
, V
OUT
to GND .................................... –0.3V to 6.5V
RF
IN
Voltage .........................................(V
CC
±
1V) to 7V
SHDN Voltage to GND ................ –0.3V to (V
CC
+ 0.3V)
I
VOUT
...................................................................... 5mA
Operating Temperature Range (Note 2) .. – 40°C to 85°C
Maximum Junction Temperature ......................... 125°C
Storage Temperature Range ................ – 65°C to 150°C
Lead Temperature (Soldering, 10 sec)................. 300°C
LTC5509ESC6
SC6 PART
MARKING
LADD
SC6 PACKAGE
6-LEAD PLASTIC SC70
T
JMAX
= 125°C,
θ
JA
= 256°C/W
Consult LTC Marketing for parts specified with wider operating temperature ranges.
The
q
denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C. V
CC
= 3.6V, SHDN = V
CC
= HI, SHDN = 0V = LO, RF Input Signal is Off,
unless otherwise noted.
PARAMETER
V
CC
Operating Voltage
I
VCC
Shutdown Current
I
VCC
Operating Current
V
OUT
V
OL
(No RF Input)
V
OUT
Output Current
V
OUT
Enable Time
V
OUT
Bandwidth
V
OUT
Load Capacitance
V
OUT
Slew Rate
V
OUT
Noise
SHDN Voltage, Chip Disabled
SHDN Voltage, Chip Enabled
SHDN Input Current
RF
IN
Input Frequency Range
RF
IN
Input Power Range
RF
IN
AC Input Resistance
RF
IN
Input Shunt Capacitance
RF Frequency = 300MHz to 3GHz (Note 5, 6)
F = 300MHz, Pin = –25dBm
F = 300MHz, Pin = –25dBm
SHDN = LO
SHDN = HI, I
VOUT
= 0mA
R
LOAD
= 2k, SHDN = HI, Enabled
SHDN = LOW, Disabled
V
OUT
= 1.75V, V
CC
= 2.7V,
∆V
OUT
= 10mV
SHDN = HI, C
LOAD
= 33pF, R
LOAD
= 2k
C
LOAD
= 33pF, R
LOAD
= 2k (Note 4)
(Note 6)
V
RFIN
= 0.7V Step, C
LOAD
= 33pF, R
LOAD
= 2k (Note 3)
V
CC
= 3V, Noise BW = 1.5MHz, 50Ω RF Input Termination
V
CC
= 2.7V to 6V
V
CC
= 2.7V to 6V
SHDN = 3.6V
q
q
q
q
q
q
ELECTRICAL CHARACTERISTICS
CONDITIONS
MIN
q
q
q
TYP
MAX
6
2
UNITS
V
µA
mA
mV
mV
mA
µs
MHz
pF
V/µs
mV
P-P
2.7
0.58
150
1
250
1
2
8
1.5
0.85
400
20
33
8
2
0.35
1.4
24
300 to 3000
–30 to 6
150
0.9
40
Note 1:
Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2:
Specifications over the –40°C to 85°C operating temperature
range are assured by design, characterization and correlation with
statistical process controls.
Note 3:
The rise time at V
OUT
is measured between V
OUT
/2 + 0.5V to
V
OUT
/2 – 0.5V.
Note 4:
Bandwidth is calculated using the 10% to 90% rise time equation:
BW = 0.35/rise time.
Note 5:
RF performance is tested at 1800MHz
Note 6:
Guaranteed by design.
2
U
V
V
µA
MHz
dBm
Ω
pF
5509f
W
U
U
W W
W
LTC5509
TYPICAL PERFOR A CE CHARACTERISTICS
Supply Current vs Supply Voltage
650
305
V
OUT
OUTPUT VOLTAGE (mV)
SUPPLY CURRENT (µA)
300
V
OUT
OUTPUT VOLTAGE (mV)
600
T
A
= –40°C
T
A
= 25°C
T
A
= 85°C
550
2.5
3
5
3.5
4
4.5
SUPPLY VOLTAGE (V)
5.5
6
Typical Detector Characteristics,
1850MHz
3000
2500
2000
T
A
= 25°C
1500
T
A
= –40°C
1000
T
A
= 85°C
500
0
0
–30 –25 –20 –15 –10 –5
RF INPUT POWER (dBm)
V
CC
= 3.6V
3000
2500
2000
V
OUT
OUTPUT VOLTAGE (mV)
V
OUT
OUTPUT VOLTAGE (mV)
T
A
= 25°C
1500
T
A
= –40°C
1000
T
A
= 85°C
500
0
0
–30 –25 –20 –15 –10 –5
RF INPUT POWER (dBm)
V
OUT
SLOPE (mV/dB)
V
OUT
Slope vs RF Input Power at
1850MHz
1000
V
CC
= 3.6V
1000
V
OUT
SLOPE (mV/dB)
100
V
OUT
SLOPE (mV/dB)
10
T
A
= –40°C
1
–30 –25 –20
U W
5509 G01
Output Voltage vs Supply Voltage
(RF Input Signal Off)
3000
2500
2000
Typical Detector Characteristics,
850MHz
V
CC
= 3.6V
T
A
= –40°C
T
A
= 25°C
1500
T
A
= –40°C
1000
T
A
= 85°C
500
0
0
–30 –25 –20 –15 –10 –5
RF INPUT POWER (dBm)
295
T
A
= 25°C
290
T
A
= 85°C
285
2.5
3
5
3.5
4
4.5
SUPPLY VOLTAGE (V)
5.5
6
5
10
5509 G02
5509 G03
Typical Detector Characteristics,
3000MHz
V
CC
= 3.6V
V
OUT
Slope vs RF Input Power at
850MHz
1000
V
CC
= 3.6V
100
10
T
A
= –40°C
T
A
= 85°C
T
A
= 25°C
5
10
5
10
1
–30 –25 –20
–15
–10
–5
0
5
5509 G06
RF INPUT POWER (dBm)
5509 G05
5509 G04
V
OUT
Slope vs RF Input Power at
3000MHz
V
CC
= 3.6V
100
T
A
= 85°C
T
A
= 25°C
10
T
A
= –40°C
T
A
= 85°C
T
A
= 25°C
–15
–10
–5
0
5
5509 G07
1
–30 –25 –20
–15
–10
–5
0
5
5509 G08
RF INPUT POWER (dBm)
RF INPUT POWER (dBm)
5509f
3
LTC5509
TYPICAL PERFOR A CE CHARACTERISTICS
RF
IN
Input Impedance (Pin = 0dBm, V
CC
= 3.6V, T
A
= 25°C)
PNT
#
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
FREQUENCY
(GHz)
0.300
0.468
0.637
0.806
0.975
1.143
1.312
1.481
1.650
1.818
1.987
2.156
2.325
2.493
2.662
2.831
3.000
RESISTANCE
(Ω)
185.434
173.804
161.644
149.450
137.402
126.251
114.165
100.350
89.015
80.586
73.674
67.737
62.354
57.833
53.701
50.166
47.094
REACTANCE
(Ω)
– 62.632
– 65.491
– 71.893
– 76.830
– 79.300
– 81.429
– 84.108
– 83.547
– 80.053
– 74.762
– 70.242
– 66.323
– 61.497
– 57.213
– 53.443
– 48.992
– 44.997
RF
IN
Input Impedance (Pin = –25dBm, V
CC
= 3.6V, T
A
= 25°C)
PNT
#
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
FREQUENCY
(GHz)
0.300
0.468
0.637
0.806
0.975
1.143
1.312
1.481
1.650
1.818
1.987
2.156
2.325
2.493
2.662
2.831
3.000
RESISTANCE
(Ω)
146.073
140.112
133.522
127.142
120.560
114.518
107.427
96.348
86.158
79.014
73.054
67.785
63.701
59.598
55.559
52.713
49.898
REACTANCE
(Ω)
– 48.091
– 44.500
– 46.654
– 50.559
– 52.094
– 53.472
– 58.362
– 61.184
– 59.226
– 55.746
– 52.613
– 49.515
– 46.430
– 43.378
– 40.355
– 37.150
– 34.268
4
U W
S11 Forward Reflection
Impedance
0.300000GHz TO 3.000000GHz
5509 TA03
S11 Forward Reflection
Impedance
0.300000GHz TO 3.000000GHz
5509 TA04
5509f
LTC5509
PI FU CTIO S
SHDN (Pin 1):
Shutdown Input. A logic low on the SHDN
pin places the part in shutdown mode. A logic high enables
the part. SHDN has an internal 150k pull down resistor to
ensure that the part is in shutdown when no input is
applied.
GND (Pin 2, 5):
Ground.
V
OUT
(Pin 3):
Detector Output.
V
CC
(Pin 4):
Power Supply Voltage, 2.7V to 6V. V
CC
should
be bypassed appropriately with ceramic capacitors.
RF
IN
(Pin 6):
RF Input Voltage. Referenced to V
CC
. A
coupling capacitor must be used to connect to the RF
signal source. The frequency range is 300MHz to 3GHz.
This pin has an internal 250Ω termination, an internal
Schottky diode detector and a peak detector capacitor.
BLOCK DIAGRA
RF
SOURCE
33pF TO 200pF
(DEPENDING ON
APPLICATION)
RF
IN
6
30k
100Ω
60µA
GND 2
GND 5
W
U
U
U
V
CC
4
+
BUFFER
3
V
OUT
–
30k
250Ω
27k
28pF
27k
100Ω
+
RF DET
130mV
–
40k
150k
BIAS
60µA
1
SHDN
5509 BD
5509f
5
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