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D1019

Description
METAL GATE RF SILICON FET
File Size40KB,4 Pages
ManufacturerSEME-LAB
Websitehttp://www.semelab.co.uk
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D1019 Overview

METAL GATE RF SILICON FET

TetraFET
D1019UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C
1
2
4
3
A
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
20W – 28V – 175MHz
SINGLE ENDED
B
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
D
G
H
• LOW C
rss
• SIMPLE BIAS CIRCUITS
E
F
PIN 1
PIN 3
DRAIN
GATE
PIN 2
PIN 4
SOURCE
SOURCE
• LOW NOISE
• HIGH GAIN – 16 dB MINIMUM
DIM
A
B
C
D
E
F
G
H
mm
26.16
5.72
45°
7.11
0.13
1.52
0.43
7.67
Tol.
0.13
0.13
0.13
0.02
0.13
0.20
REF
Inches
1.030
0.225
45°
0.280
0.005
0.55
0.060
0.120
Tol.
0.015
0.005
0.005
0.001
0.005
0.008
REF
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 175 MHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
50W
70V
±20V
5A
–65 to 150°C
200°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
6/99

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