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3SK183Q

Description
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, CROSS PACK-4
CategoryDiscrete semiconductor    The transistor   
File Size365KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet Parametric Compare View All

3SK183Q Overview

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, CROSS PACK-4

3SK183Q Parametric

Parameter NameAttribute value
package instructionDISK BUTTON, O-XRDB-F4
Contacts4
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW NOISE
ConfigurationSINGLE
Minimum drain-source breakdown voltage13 V
Maximum drain current (Abs) (ID)0.05 A
Maximum drain current (ID)0.05 A
FET technologyMETAL SEMICONDUCTOR
Maximum feedback capacitance (Crss)0.04 pF
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeO-XRDB-F4
Number of components1
Number of terminals4
Operating modeDUAL GATE, DEPLETION MODE
Maximum operating temperature135 °C
Package body materialUNSPECIFIED
Package shapeROUND
Package formDISK BUTTON
Polarity/channel typeN-CHANNEL
Maximum power consumption environment0.35 W
Minimum power gain (Gp)13 dB
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationRADIAL
transistor applicationsAMPLIFIER
Transistor component materialsGALLIUM ARSENIDE
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3SK183Q Related Products

3SK183Q 3SK183R 3SK183P 3SK183S
Description RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, CROSS PACK-4 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, CROSS PACK-4 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, CROSS PACK-4 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, CROSS PACK-4
package instruction DISK BUTTON, O-XRDB-F4 DISK BUTTON, O-XRDB-F4 DISK BUTTON, O-XRDB-F4 DISK BUTTON, O-XRDB-F4
Contacts 4 4 4 4
Reach Compliance Code unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99
Other features LOW NOISE LOW NOISE LOW NOISE LOW NOISE
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum drain-source breakdown voltage 13 V 13 V 13 V 13 V
Maximum drain current (Abs) (ID) 0.05 A 0.05 A 0.05 A 0.05 A
Maximum drain current (ID) 0.05 A 0.05 A 0.05 A 0.05 A
FET technology METAL SEMICONDUCTOR METAL SEMICONDUCTOR METAL SEMICONDUCTOR METAL SEMICONDUCTOR
Maximum feedback capacitance (Crss) 0.04 pF 0.04 pF 0.04 pF 0.04 pF
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 code O-XRDB-F4 O-XRDB-F4 O-XRDB-F4 O-XRDB-F4
Number of components 1 1 1 1
Number of terminals 4 4 4 4
Operating mode DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE
Maximum operating temperature 135 °C 135 °C 135 °C 135 °C
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape ROUND ROUND ROUND ROUND
Package form DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power consumption environment 0.35 W 0.35 W 0.35 W 0.35 W
Minimum power gain (Gp) 13 dB 13 dB 13 dB 13 dB
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES
Terminal form FLAT FLAT FLAT FLAT
Terminal location RADIAL RADIAL RADIAL RADIAL
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials GALLIUM ARSENIDE GALLIUM ARSENIDE GALLIUM ARSENIDE GALLIUM ARSENIDE
Base Number Matches 1 1 1 1

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