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CZT2955PNP

Description
2.0W SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTOR
File Size73KB,2 Pages
ManufacturerCentral Semiconductor
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CZT2955PNP Overview

2.0W SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTOR

CZT2955 PNP
CZT3055 NPN
2.0W SURFACE MOUNT
COMPLEMENTARY SILICON
POWER TRANSISTOR
Central
TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT2955
and CZT3055 types are surface mount epoxy
molded complementary silicon transistors
manufactured by the epitaxial base process,
designed for surface mounted power amplifier
applications up to 6.0 amps.
MARKING CODE: FULL PART NUMBER
SOT-223 CASE
MAXIMUM RATINGS:
(TA=25°C)
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
TJ,Tstg
Θ
JA
-65 to +150
62.5
°C
°C/W
VCBO
VCER
VCEO
VEBO
IC
IB
PD
100
70
60
7.0
6.0
3.0
2.0
UNITS
V
V
V
V
A
A
W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICEO
ICEV
IEBO
BVCER
BVCEO
VCE=30V
VCE=100V, VEB=1.5V
VEB=7.0V
IC=30mA, RBE=100Ω
IC=30mA
70
60
MAX
700
1.0
5.0
UNITS
µA
mA
mA
V
V
* VCE(SAT) IC=4.0A, IB=400mA
* VBE(ON) VCE=4.0V, IC=4.0A
* hFE
VCE=4.0V, IC=4.0A
* hFE
fT
VCE=4.0V, IC=6.0A
VCE=10V, IC=500mA, f=1.0MHz
1.1
1.5
20
5.0
2.5
70
V
V
MHz
* Pulsed, 2% D.C.
R3 (17-June 2004)

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